P

Inventor

HUANG WEI-CHIEH

TW32 patents
⚠️ This page may combine multiple inventors who share the name “HUANG WEI-CHIEH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

15 patents
US10439135B2Oct 8, 2019

VIA structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9847477B2Dec 19, 2017

Method of forming a bottom electrode of a magnetoresistive random access memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US10510587B2Dec 17, 2019

Method for manufacturing semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11049767B2Jun 29, 2021

Semiconductor device and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12439837B2Oct 7, 2025

Via structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12342728B2Jun 24, 2025

Method of forming a bottom electrode of a magnetoresistive random access memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12010933B2Jun 11, 2024

Via structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11489115B2Nov 1, 2022

VIA structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289646B2Mar 29, 2022

Method of forming a bottom electrode of a magnetoresistive random access memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10998498B2May 4, 2021

VIA structure and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10910260B2Feb 2, 2021

Method for manufacturing semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10083914B2Sep 25, 2018

Invisible dummy features and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12456649B2Oct 28, 2025

Semiconductor device and methods of manufacturing thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US9484310B2Nov 1, 2016

Invisible dummy features and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10535815B2Jan 14, 2020

Method of forming a bottom electrode of a magnetoresistive random access memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

REALTEK SEMICONDUCTOR CORP

5 patents

MACRONIX INT CO LTD

3 patents

NAT CHUNG-SHAN INST OF SCIENCE AND TECH

2 patents

TAIWAN SEMICONDUCTOR MFG

2 patents

WISTRON CORP

1 patent

DYACO INT INC

1 patent

HUANG WEI-CHIEH

1 patent

AUO CORP

1 patent

LI CHIH-PENG

1 patent