Inventor
KAMISAWA AKIRA
JP12 patents
Patents
12 patentsUS5271797ADec 21, 1993
Method for patterning metal oxide thin film
ROHM CO LTD60 citations95
US6232242B1May 15, 2001
Method of forming a crystalline insulation layer on a silicon substrate
ROHM CO LTD98 citations94
US5627013AMay 6, 1997
Method of forming a fine pattern of ferroelectric film
ROHM CO LTD28 citations92
US6683012B2Jan 27, 2004
Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride
ROHM CO LTD16 citations89
US6086665AJul 11, 2000
Solution for forming ferroelectric film and method for forming ferroelectric film
ROHM CO LTD17 citations88
US6245451B1Jun 12, 2001
Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the same
ROHM CO LTD23 citations87
US6013334AJan 11, 2000
Method for forming a thin film of a complex compound
ROHM CO LTD7 citations73
US5846686ADec 8, 1998
Agent for forming a fine pattern of ferroelectric film, and method of forming a fine pattern of ferroelectric film
ROHM CO LTD9 citations73
US5291436AMar 1, 1994
Ferroelectric memory with multiple-value storage states
ROHM CO LTD11 citations73
US6055176AApr 25, 2000
Memory device with processing function
ROHM CO LTD2 citations59
US7947365B2May 24, 2011
Mesoporous thin film and method of producing the same
ROHM CO LTD0 citations50
US6485779B1Nov 26, 2002
Solution for forming ferroelectric film and method for forming ferroelectric film
ROHM CO LTD0 citations48