Inventor

HOYT JUDY L

US11 patents

⚠️ This page may combine multiple inventors who share the name “HOYT JUDY L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MASSACHUSETTS INST TECHNOLOGY

4 patents

US6737670B2May 18, 2004

Semiconductor substrate structure

MASSACHUSETTS INST TECHNOLOGY90 citations98

US6573126B2Jun 3, 2003

Process for producing semiconductor article using graded epitaxial growth

MASSACHUSETTS INST TECHNOLOGY209 citations98

US7920770B2Apr 5, 2011

Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal

MASSACHUSETTS INST TECHNOLOGY57 citations96

US6921914B2Jul 26, 2005

Process for producing semiconductor article using graded epitaxial growth

MASSACHUSETTS INST TECHNOLOGY49 citations95

HEWLETT PACKARD CO

3 patents

US5202284AApr 13, 1993

Selective and non-selective deposition of Si1-x Gex on a Si subsrate that is partially masked with SiO2

HEWLETT PACKARD CO128 citations96

US5256550AOct 26, 1993

Fabricating a semiconductor device with strained Si1-x Gex layer

HEWLETT PACKARD CO69 citations94

US5084411AJan 28, 1992

Semiconductor processing with silicon cap over Si1-x Gex Film

HEWLETT PACKARD CO21 citations80

UNIV LELAND STANFORD JUNIOR

2 patents

US7867859B1Jan 11, 2011

Gate electrode with depletion suppression and tunable workfunction

UNIV LELAND STANFORD JUNIOR2 citations62

US9269633B2Feb 23, 2016

Method for forming gate electrode with depletion suppression and tunable workfunction

UNIV LELAND STANFORD JUNIOR0 citations41

MASACHUSETTS INST OF TECHNOLOG

1 patent

US6713326B2Mar 30, 2004

Process for producing semiconductor article using graded epitaxial growth

MASACHUSETTS INST OF TECHNOLOG150 citations96

UNIV STANFORD

1 patent

US4787551ANov 29, 1988

Method of welding thermocouples to silicon wafers for temperature monitoring in rapid thermal processing

UNIV STANFORD24 citations82