Inventor

KWONG DIM-LEE

SG27 patents

⚠️ This page may combine multiple inventors who share the name “KWONG DIM-LEE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KWONG DIM-LEE

ADVANCED MICRO DEVICES INC

Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof

Method of making gate dielectric for sub-half micron MOS transistors including a graded dielectric constant

Method of forming high pressure silicon oxynitride gate dielectrics

Method of forming ultra thin gate dielectric for high performance semiconductor devices

Method for achieving a highly reliable oxide film

Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance

CMOS transistor design for shared N+/P+ electrode with enhanced device performance

Semiconductor topography employing a nitrogenated shallow trench isolation structure

High K integration of gate dielectric with integrated spacer formation for high speed CMOS

Method for forming metal silicide on a semiconductor surface with minimal effect on pre-existing implants

UNIV TEXAS

Ultra thin dielectric for electronic devices and method of making same

Method of making MOS transistor having improved oxynitride dielectric

Method of making an ultra thin dielectric for electronic devices

MOS transistor having improved oxynitride dielectric

LSI LOGIC CORP

Tunable dielectric constant oxide and method of manufacture

Integrated circuit device having a capacitor with the dielectric peripheral region being greater than the dielectric central region

Integrated circuit device and method of making the same using chemical mechanical polishing to remove material in two layers following masking

NCR CO

Method of making a shallow junction by using first and second SOG layers

Method for forming epitaxial silicon on insulator structures using oxidized porous silicon

Method for forming a bipolar transistor using doped SOG

NOVELLUS SYSTEMS INC

Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology

MATTSON TECH INC

Silicon oxynitride film

IMEC INTER UNI MICRO ELECTR

Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET

TEXAS INSTRUMENTS INC

High charge storage density integrated circuit capacitor

UNIV SINGAPORE

Schottky barrier source/drain n-mosfet using ytterbium silicide

ZHANG QINGXIN

Wafer arrangement and a method for manufacturing the wafer arrangement

YU HONG YU

Thermal robust semiconductor device using HfN as metal gate electrode and the manufacturing process thereof