Inventor
BUCHANAN DOUGLAS ANDREW
US9 patents
Patents
9 patentsUS6852575B2Feb 8, 2005
Method of forming lattice-matched structure on silicon and structure formed thereby
IBM43 citations95
US5789312AAug 4, 1998
Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics
IBM49 citations95
US6245616B1Jun 12, 2001
Method of forming oxynitride gate dielectric
IBM50 citations94
US6566281B1May 20, 2003
Nitrogen-rich barrier layer and structures formed
IBM60 citations93
US7432550B2Oct 7, 2008
Semiconductor structure including mixed rare earth oxide formed on silicon
IBM16 citations92
US6756646B2Jun 29, 2004
Oxynitride gate dielectric and method of forming
IBM24 citations91
US6091122AJul 18, 2000
Fabrication of mid-cap metal gates compatible with ultra-thin dielectrics
IBM20 citations91
US7923743B2Apr 12, 2011
Semiconductor structure including mixed rare earth oxide formed on silicon
IBM9 citations83
US7648864B2Jan 19, 2010
Semiconductor structure including mixed rare earth oxide formed on silicon
IBM4 citations73