Inventor
SEONG TAE YEON
KR48 patents
⚠️ This page may combine multiple inventors who share the name “SEONG TAE YEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
16 patentsUS7205576B2Apr 17, 2007
Light emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD17 citations93
US7910935B2Mar 22, 2011
Group-III nitride-based light emitting device
SAMSUNG ELECTRONICS CO LTD21 citations92
US7485479B2Feb 3, 2009
Nitride-based light emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7372081B2May 13, 2008
Nitride light emitting device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD16 citations84
US7358541B2Apr 15, 2008
Flip-chip light emitting diode and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD16 citations84
US7193249B2Mar 20, 2007
Nitride-based light emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD15 citations84
US7417264B2Aug 26, 2008
Top-emitting nitride-based light emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD11 citations83
US6989598B2Jan 24, 2006
Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations71
US7964889B2Jun 21, 2011
Nitride-based light-emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7687908B2Mar 30, 2010
Thin film electrode for high-quality GaN optical devices
SAMSUNG ELECTRONICS CO LTD2 citations63
US7541207B2Jun 2, 2009
Light emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7491564B2Feb 17, 2009
Flip-chip nitride light emitting device and method of manufacturing thereof
SAMSUNG ELECTRONICS CO LTD2 citations63
US7462877B2Dec 9, 2008
Nitride-based light emitting device, and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7666693B2Feb 23, 2010
Top-emitting nitride-based light emitting device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7550374B2Jun 23, 2009
Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations60
US7482639B2Jan 27, 2009
Nitride-based light-emitting device
SAMSUNG ELECTRONICS CO LTD0 citations52
SEONG TAE YEON
8 patentsUS9978911B2May 22, 2018
Light-emitting diode device for enhancing light extraction efficiency and current injection efficiency
SEONG TAE YEON2 citations71
US10333026B2Jun 25, 2019
Lateral light emitting diode device and method for fabricating the same
SEONG TAE YEON2 citations69
US10181550B2Jan 15, 2019
Method for fabricating high-efficiency light emitting diode having light emitting window electrode structure
SEONG TAE YEON2 citations69
US8946745B2Feb 3, 2015
Supporting substrate for manufacturing vertically-structured semiconductor light-emitting device and semiconductor light-emitting device using the supporting substrate
SEONG TAE YEON1 citations52
US10403791B2Sep 3, 2019
Vertical light-emitting diode device and method of fabricating the same
SEONG TAE YEON0 citations48
US8932890B2Jan 13, 2015
Vertical-structure semiconductor light emitting element and a production method therefor
SEONG TAE YEON0 citations41
US10263157B2Apr 16, 2019
Light-emitting diode with transparent conductive electrodes for improvement in light extraction efficiency
SEONG TAE YEON0 citations34
US10177279B2Jan 8, 2019
Light-emitting diode with multiple N contact structure
SEONG TAE YEON0 citations34
KWANGJU INST SCI & TECH
5 patentsUS6326294B1Dec 4, 2001
Method of fabricating an ohmic metal electrode for use in nitride compound semiconductor devices
KWANGJU INST SCI & TECH111 citations97
US7285857B2Oct 23, 2007
GaN-based III—V group compound semiconductor device and p-type electrode for the same
KWANGJU INST SCI & TECH22 citations92
US7180094B2Feb 20, 2007
Nitride-based light emitting device and method of manufacturing the same
KWANGJU INST SCI & TECH18 citations92
US6169297B1Jan 2, 2001
Metal thin film with ohmic contact for light emit diodes
KWANGJU INST SCI & TECH51 citations91
US7190002B2Mar 13, 2007
Flip-chip nitride light emitting device and method of manufacturing thereof
KWANGJU INST SCI & TECH10 citations84
SAMSUNG LED CO LTD
4 patentsUS7960746B2Jun 14, 2011
Low resistance electrode and compound semiconductor light emitting device including the same
SAMSUNG LED CO LTD6 citations74
US7880176B2Feb 1, 2011
Top-emitting light emitting diodes and methods of manufacturing thereof
SAMSUNG LED CO LTD5 citations73
US7872271B2Jan 18, 2011
Flip-chip light emitting diodes and method of manufacturing thereof
SAMSUNG LED CO LTD2 citations62
US8053786B2Nov 8, 2011
Top-emitting light emitting diodes and methods of manufacturing thereof
SAMSUNG LED CO LTD0 citations51
SEONG TAE-YEON
3 patentsUS8487344B2Jul 16, 2013
Optical device and method of fabricating the same
SEONG TAE-YEON11 citations84
US8227283B2Jul 24, 2012
Top-emitting N-based light emitting device and method of manufacturing the same
SEONG TAE-YEON6 citations69
US8202751B2Jun 19, 2012
Flip-chip light emitting diodes and method of manufacturing thereof
SEONG TAE-YEON1 citations51
SAMSUNG ELECTRO MECH
3 patentsUS7491979B2Feb 17, 2009
Reflective electrode and compound semiconductor light emitting device including the same
SAMSUNG ELECTRO MECH16 citations84
US7737456B2Jun 15, 2010
Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same
SAMSUNG ELECTRO MECH6 citations74
US7736924B2Jun 15, 2010
Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same
SAMSUNG ELECTRO MECH1 citations52
UNIV KOREA RES & BUS FOUND
3 patentsUS11961750B2Apr 16, 2024
Magnetic transfer apparatus and fabrication method of the same
UNIV KOREA RES & BUS FOUND2 citations69
US12266555B2Apr 1, 2025
Magnetic transfer apparatus and fabrication method of the same
UNIV KOREA RES & BUS FOUND0 citations58
US12432982B2Sep 30, 2025
Multi-channel transistor and manufacturing method by the same
UNIV KOREA RES & BUS FOUND0 citations42
CHOI KWANG KI
2 patentsLG INNOTEK CO LTD
2 patentsUS9224910B2Dec 29, 2015
Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
LG INNOTEK CO LTD4 citations73
US8877530B2Nov 4, 2014
Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
LG INNOTEK CO LTD4 citations73