P

Inventor

SEONG TAE YEON

KR48 patents
⚠️ This page may combine multiple inventors who share the name “SEONG TAE YEON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

16 patents
US7205576B2Apr 17, 2007

Light emitting device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD17 citations93
US7910935B2Mar 22, 2011

Group-III nitride-based light emitting device

SAMSUNG ELECTRONICS CO LTD21 citations92
US7485479B2Feb 3, 2009

Nitride-based light emitting device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7372081B2May 13, 2008

Nitride light emitting device and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD16 citations84
US7358541B2Apr 15, 2008

Flip-chip light emitting diode and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD16 citations84
US7193249B2Mar 20, 2007

Nitride-based light emitting device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD15 citations84
US7417264B2Aug 26, 2008

Top-emitting nitride-based light emitting device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations83
US6989598B2Jan 24, 2006

Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations71
US7964889B2Jun 21, 2011

Nitride-based light-emitting device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7687908B2Mar 30, 2010

Thin film electrode for high-quality GaN optical devices

SAMSUNG ELECTRONICS CO LTD2 citations63
US7541207B2Jun 2, 2009

Light emitting device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7491564B2Feb 17, 2009

Flip-chip nitride light emitting device and method of manufacturing thereof

SAMSUNG ELECTRONICS CO LTD2 citations63
US7462877B2Dec 9, 2008

Nitride-based light emitting device, and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7666693B2Feb 23, 2010

Top-emitting nitride-based light emitting device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations62
US7550374B2Jun 23, 2009

Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations60
US7482639B2Jan 27, 2009

Nitride-based light-emitting device

SAMSUNG ELECTRONICS CO LTD0 citations52

SEONG TAE YEON

8 patents

KWANGJU INST SCI & TECH

5 patents

SAMSUNG LED CO LTD

4 patents

SEONG TAE-YEON

3 patents

SAMSUNG ELECTRO MECH

3 patents

UNIV KOREA RES & BUS FOUND

3 patents

CHOI KWANG KI

2 patents

LG INNOTEK CO LTD

2 patents

CHO JAE-HEE

1 patent

KWAK JOON SEOP

1 patent