Inventor
CHEN HUNG-LIN
TW19 patents
⚠️ This page may combine multiple inventors who share the name “CHEN HUNG-LIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS9865609B2Jan 9, 2018
One-time-programming (OTP) memory cell with floating gate shielding
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations72
US9966427B2May 8, 2018
Metal-insulator-metal (MIM) capacitor with an electrode scheme for improved manufacturability and reliability
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations67
US12427622B2Sep 30, 2025
Polishing pad conditioning apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11618126B2Apr 4, 2023
Polishing pad conditioning apparatus
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12033951B2Jul 9, 2024
Alignment mark structure and method for making
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12211910B2Jan 28, 2025
Bipolar junction transistor (BJT) and fabricating method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10586705B2Mar 10, 2020
Fluorine doped non-volatile memory cells and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12138735B2Nov 12, 2024
Multi-layered windows for use in chemical-mechanical planarization systems
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations46
TAIWAN SEMICONDUCTOR MFG
4 patentsUS7968431B2Jun 28, 2011
Diffusion region routing for narrow scribe-line devices
TAIWAN SEMICONDUCTOR MFG11 citations81
US7453127B2Nov 18, 2008
Double-diffused-drain MOS device with floating non-insulator spacers
TAIWAN SEMICONDUCTOR MFG8 citations73
US7585737B2Sep 8, 2009
Method of manufacturing double diffused drains in semiconductor devices
TAIWAN SEMICONDUCTOR MFG0 citations51
US7485905B2Feb 3, 2009
Electrostatic discharge protection device
TAIWAN SEMICONDUCTOR MFG0 citations51