Inventor

KING PAUL L

US34 patents

⚠️ This page may combine multiple inventors who share the name “KING PAUL L”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KING PAUL L

ADVANCED MICRO DEVICES INC

Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors

Process for forming fully silicided gates

Damascene NiSi metal gate high-k transistor

Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors

Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed

Silicide gate transistors

Automated control of metal thickness during film deposition

Method of reducing electromigration by forming an electroplated copper-zinc interconnect and a semiconductor device thereby formed

Metal silicide gate transistors

Enhancement of nickel silicide formation by use of nickel pre-amorphizing implant

Silicide gate transistors

Damascene NiSi metal gate high-k transistor

Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors

High dielectric constant materials as gate dielectrics

Composite barrier layers with controlled copper interface surface roughness

Method of forming composite barrier layers with controlled copper interface surface roughness

Method of controlling the formation of metal layers

Hydrogen passivated silicon nitride spacers for reduced nickel silicide bridging

Reduction of lateral silicide growth in integrated circuit technology

Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing

Selectable open circuit and anti-fuse element, and fabrication method therefor

Semiconductor device formed by calcium doping a copper surface using a chemical solution

Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed

Silicide process using high K-dielectrics

Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution

Low stress sidewall spacer in integrated circuit technology

Passivation of nitride spacer

Method of making silicide stop layer in a damascene semiconductor structure

Conversion of transition metal to silicide through back end processing in integrated circuit technology

Selectable open circuit and anti-fuse element

ITT

Independently mounted fall prevention apparatus

Safety clamp device and apparatus utilizing same

CORNELL RES FOUNDATION INC

Electronic keyboard system and method for reproducing selected symbolic language characters

(unassigned)

Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface