P

Inventor

BERNARD JOFFRE F

US15 patents
⚠️ This page may combine multiple inventors who share the name “BERNARD JOFFRE F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

12 patents
US6630741B1Oct 7, 2003

Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed

ADVANCED MICRO DEVICES INC58 citations96
US6515367B1Feb 4, 2003

Sub-cap and method of manufacture therefor in integrated circuit capping layers

ADVANCED MICRO DEVICES INC21 citations92
US6465867B1Oct 15, 2002

Amorphous and gradated barrier layer for integrated circuit interconnects

ADVANCED MICRO DEVICES INC25 citations92
US6406996B1Jun 18, 2002

Sub-cap and method of manufacture therefor in integrated circuit capping layers

ADVANCED MICRO DEVICES INC16 citations92
US6541860B1Apr 1, 2003

Barrier-to-seed layer alloying in integrated circuit interconnects

ADVANCED MICRO DEVICES INC10 citations74
US6479898B1Nov 12, 2002

Dielectric treatment in integrated circuit interconnects

ADVANCED MICRO DEVICES INC9 citations74
US6469387B1Oct 22, 2002

Semiconductor device formed by calcium doping a copper surface using a chemical solution

ADVANCED MICRO DEVICES INC11 citations74
US6444580B1Sep 3, 2002

Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed

ADVANCED MICRO DEVICES INC6 citations74
US6770559B1Aug 3, 2004

Method of forming wiring by implantation of seed layer material

ADVANCED MICRO DEVICES INC12 citations73
US6541286B1Apr 1, 2003

Imaging of integrated circuit interconnects

ADVANCED MICRO DEVICES INC12 citations73
US6624074B1Sep 23, 2003

Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution

ADVANCED MICRO DEVICES INC5 citations63
US6811671B1Nov 2, 2004

Method of controlling zinc-doping in a copper-zinc alloy thin film electroplated on a copper surface and a semiconductor device thereby formed

ADVANCED MICRO DEVICES INC3 citations62

RATHOR MANUJ

1 patent
US8093698B2Jan 10, 2012

Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device

RATHOR MANUJ6 citations71

(unassigned)

1 patent
US6621165B1Sep 16, 2003

Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface

4 citations62

SPANSION LLC

1 patent
US8373148B2Feb 12, 2013

Memory device with improved performance

SPANSION LLC0 citations51