Inventor
CHOI GILHEYUN
KR23 patents
⚠️ This page may combine multiple inventors who share the name “CHOI GILHEYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
14 patentsUS9076849B2Jul 7, 2015
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD6 citations84
US9070748B2Jun 30, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US8941216B2Jan 27, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD7 citations84
US8927426B2Jan 6, 2015
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US9543250B2Jan 10, 2017
Semiconductor devices including through-silicon via
SAMSUNG ELECTRONICS CO LTD3 citations73
US9543200B2Jan 10, 2017
Methods for fabricating semiconductor devices having through electrodes
SAMSUNG ELECTRONICS CO LTD3 citations72
US9171781B2Oct 27, 2015
Semiconductor devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations72
US8872351B2Oct 28, 2014
Semiconductor devices having through electrodes
SAMSUNG ELECTRONICS CO LTD3 citations62
US8691692B2Apr 8, 2014
Semiconductor chips and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US9362172B2Jun 7, 2016
Semiconductor devices having through-vias and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9053948B2Jun 9, 2015
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations51
US8710650B2Apr 29, 2014
Semiconductor devices having through electrodes and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US9142489B2Sep 22, 2015
Semiconductor devices including a non-planar conductive pattern, and methods of forming semiconductor devices including a non-planar conductive pattern
SAMSUNG ELECTRONICS CO LTD0 citations50
US9583373B2Feb 28, 2017
Wafer carrier having cavity
SAMSUNG ELECTRONICS CO LTD0 citations42
LEE HO-JIN
3 patentsUS9171753B2Oct 27, 2015
Semiconductor devices having conductive via structures and methods for fabricating the same
LEE HO-JIN7 citations83
US9153489B2Oct 6, 2015
Microelectronic devices having conductive through via electrodes insulated by gap regions
LEE HO-JIN5 citations72
US8564139B2Oct 22, 2013
Semiconductor devices including protected barrier layers
LEE HO-JIN4 citations62