Inventor
CHANG JIA-HWANG
TW17 patents
⚠️ This page may combine multiple inventors who share the name “CHANG JIA-HWANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ACTEL CORP
7 patentsUS5083083AJan 21, 1992
Testability architecture and techniques for programmable interconnect architecture
ACTEL CORP126 citations98
US5432441AJul 11, 1995
Testability architecture and techniques for programmable interconnect architecture
ACTEL CORP33 citations92
US5365165ANov 15, 1994
Testability architecture and techniques for programmable interconnect architecture
ACTEL CORP30 citations92
US5341092AAug 23, 1994
Testability architecture and techniques for programmable interconnect architecture
ACTEL CORP36 citations92
US5309091AMay 3, 1994
Testability architecture and techniques for programmable interconnect architecture
ACTEL CORP35 citations92
US5223792AJun 29, 1993
Testability architecture and techniques for programmable interconnect architecture
ACTEL CORP52 citations92
US5208530AMay 4, 1993
Testability architecture and techniques for programmable interconnect architecture
ACTEL CORP47 citations92
ROHM CORP
3 patentsUS5689459ANov 18, 1997
Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase
ROHM CORP66 citations94
US5587947ADec 24, 1996
Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase
ROHM CORP33 citations94
US5615147AMar 25, 1997
Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase
ROHM CORP24 citations90
NINGBO ADVANCED MEMORY TECH CORP
3 patentsUS9514817B1Dec 6, 2016
Non-volatile memory device with memristor
NINGBO ADVANCED MEMORY TECH CORP8 citations82
US9401203B1Jul 26, 2016
Memory driving circuit
NINGBO ADVANCED MEMORY TECH CORP6 citations71
US9543006B2Jan 10, 2017
Non-volatile memory cell and non-volatile memory device
NINGBO ADVANCED MEMORY TECH CORP0 citations40