Inventor
THURGATE TIMOTHY
US46 patents
⚠️ This page may combine multiple inventors who share the name “THURGATE TIMOTHY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
20 patentsUS7009271B1Mar 7, 2006
Memory device with an alternating Vss interconnection
ADVANCED MICRO DEVICES INC49 citations93
US6180468B1Jan 30, 2001
Very low thermal budget channel implant process for semiconductors
ADVANCED MICRO DEVICES INC48 citations93
US6049479AApr 11, 2000
Operational approach for the suppression of bi-directional tunnel oxide stress of a flash cell
ADVANCED MICRO DEVICES INC52 citations93
US6329687B1Dec 11, 2001
Two bit flash cell with two floating gate regions
ADVANCED MICRO DEVICES INC25 citations92
US6255165B1Jul 3, 2001
Nitride plug to reduce gate edge lifting
ADVANCED MICRO DEVICES INC50 citations92
US6770938B1Aug 3, 2004
Diode fabrication for ESD/EOS protection
ADVANCED MICRO DEVICES INC40 citations90
US6524914B1Feb 25, 2003
Source side boron implanting and diffusing device architecture for deep sub 0.18 micron flash memory
ADVANCED MICRO DEVICES INC15 citations84
US6518072B1Feb 11, 2003
Deposited screen oxide for reducing gate edge lifting
ADVANCED MICRO DEVICES INC15 citations84
US6908816B1Jun 21, 2005
Method for forming a dielectric spacer in a non-volatile memory device
ADVANCED MICRO DEVICES INC15 citations83
US6329273B1Dec 11, 2001
Solid-source doping for source/drain to eliminate implant damage
ADVANCED MICRO DEVICES INC15 citations83
US6147907ANov 14, 2000
Biasing scheme to reduce stress on non-selected cells during read
ADVANCED MICRO DEVICES INC9 citations74
US6143612ANov 7, 2000
High voltage transistor with high gated diode breakdown, low body effect and low leakage
ADVANCED MICRO DEVICES INC9 citations74
US6337246B1Jan 8, 2002
Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing
ADVANCED MICRO DEVICES INC13 citations73
US6268624B1Jul 31, 2001
Method for inhibiting tunnel oxide growth at the edges of a floating gate during semiconductor device processing
ADVANCED MICRO DEVICES INC11 citations73
US6773990B1Aug 10, 2004
Method for reducing short channel effects in memory cells and related structure
ADVANCED MICRO DEVICES INC4 citations63
US7067381B1Jun 27, 2006
Structure and method to reduce drain induced barrier lowering
ADVANCED MICRO DEVICES INC6 citations62
US6653189B1Nov 25, 2003
Source side boron implant and drain side MDD implant for deep sub 0.18 micron flash memory
ADVANCED MICRO DEVICES INC6 citations60
US6188113B1Feb 13, 2001
High voltage transistor with high gated diode breakdown, low body effect and low leakage
ADVANCED MICRO DEVICES INC3 citations58
US7049188B2May 23, 2006
Lateral doped channel
ADVANCED MICRO DEVICES INC1 citations51
US6911704B2Jun 28, 2005
Memory cell array with staggered local inter-connect structure
ADVANCED MICRO DEVICES INC0 citations42
SPANSION LLC
12 patentsUS7489560B2Feb 10, 2009
Reduction of leakage current and program disturbs in flash memory devices
SPANSION LLC8 citations84
US7767517B2Aug 3, 2010
Semiconductor memory comprising dual charge storage nodes and methods for its fabrication
SPANSION LLC3 citations63
US7696038B1Apr 13, 2010
Methods for fabricating flash memory devices
SPANSION LLC4 citations63
US7301193B2Nov 27, 2007
Structure and method for low Vss resistance and reduced DIBL in a floating gate memory cell
SPANSION LLC2 citations63
US7626869B2Dec 1, 2009
Multi-phase wordline erasing for flash memory
SPANSION LLC3 citations62
US7952938B2May 31, 2011
Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory
SPANSION LLC3 citations60
US7746705B2Jun 29, 2010
Selective application of word line bias to minimize fringe effects in electromagnetic fields during erase of nonvolatile memory
SPANSION LLC4 citations59
US7462907B1Dec 9, 2008
Method of increasing erase speed in memory arrays
SPANSION LLC0 citations52
US6963106B1Nov 8, 2005
Memory array with memory cells having reduced short channel effects
SPANSION LLC0 citations52
US7785965B2Aug 31, 2010
Dual storage node memory devices and methods for fabricating the same
SPANSION LLC0 citations50
US7888218B2Feb 15, 2011
Using thick spacer for bitline implant then remove
SPANSION LLC0 citations42
US7671405B2Mar 2, 2010
Deep bitline implant to avoid program disturb
SPANSION LLC0 citations42
BANNA SRINIVASA RAO
3 patentsUS9559216B2Jan 31, 2017
Semiconductor memory device and method for biasing same
BANNA SRINIVASA RAO8 citations82
US8531878B2Sep 10, 2013
Techniques for providing a semiconductor memory device
BANNA SRINIVASA RAO8 citations82
US8547738B2Oct 1, 2013
Techniques for providing a semiconductor memory device
BANNA SRINIVASA RAO2 citations60
MICRON TECHNOLOGY INC
3 patentsUS9263133B2Feb 16, 2016
Techniques for providing a semiconductor memory device
MICRON TECHNOLOGY INC7 citations78
US9524971B2Dec 20, 2016
Techniques for providing a semiconductor memory device
MICRON TECHNOLOGY INC0 citations51
US9019759B2Apr 28, 2015
Techniques for providing a semiconductor memory device
MICRON TECHNOLOGY INC0 citations51