P

Inventor

ITOH HIRONORI

JP15 patents
⚠️ This page may combine multiple inventors who share the name “ITOH HIRONORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO ELECTRIC INDUSTRIES

13 patents
US10770550B2Sep 8, 2020

Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES1 citations73
US10490634B2Nov 26, 2019

Silicon carbide epitaxial substrate having a silicon carbide layer and method of manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES3 citations73
US10121865B2Nov 6, 2018

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES2 citations72
US10612160B2Apr 7, 2020

Epitaxial wafer and method for manufacturing same

SUMITOMO ELECTRIC INDUSTRIES2 citations71
US9957641B2May 1, 2018

Epitaxial wafer and method for manufacturing same

SUMITOMO ELECTRIC INDUSTRIES2 citations71
US10396163B2Aug 27, 2019

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES3 citations70
US11004941B2May 11, 2021

Silicon carbide epitaxial substrate having grooves extending along main surface and method of manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations62
US10697086B2Jun 30, 2020

Method for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial substrate

SUMITOMO ELECTRIC INDUSTRIES1 citations62
US12014924B2Jun 18, 2024

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES1 citations60
US11373868B2Jun 28, 2022

Method for manufacturing silicon carbide epitaxial substrate

SUMITOMO ELECTRIC INDUSTRIES0 citations50
US10865501B2Dec 15, 2020

Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations41
US10825903B2Nov 3, 2020

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations41
US10811500B2Oct 20, 2020

Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device

SUMITOMO ELECTRIC INDUSTRIES0 citations41

TOSHIBA KK

1 patent

JAPAN SCIENCE & TECH AGENCY

1 patent