Inventor

MATSUSHITA SHIGEHARU

JP26 patents

⚠️ This page may combine multiple inventors who share the name “MATSUSHITA SHIGEHARU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA SHIGEHARU

SANYO ELECTRIC CO

Semiconductor memory device

Memory with a refresh portion for rewriting data

Memory

Memory

Field effect semiconductor device

Method of doping a group III-V compound semiconductor

Ferroelectric memory and operating method therefor

Ferroelectric memory

Ferroelectric memory and operating method therefor

Memory device

Dielectric element

Ferroelectric memory and operating method therefor, and memory device

Dielectric element including oxide-based dielectric film and method of fabricating the same

Field-effect semiconductor device having heterojunction

Method of doping, semiconductor device, and method of fabricating semiconductor device

Field effect type semiconductor device and method of fabricating the same

Memory

Method of fabricating memory and memory

Dielectric device having dielectric film terminated by halogen atoms

Memory device having storage part and thin-film part

Semiconductor device and field effect transistor

Field effect transistor semiconductor and method for manufacturing the same

Dielectric element including oxide dielectric film and method of manufacturing the same

Memory

MIYAMOTO HIDEAKI

Ferroelectric memory having a refresh control circuit capable of recovering residual polarization of unselected memory cells

PATRENELLA CAPITAL LTD LLC

Memory device configured to refresh memory cells in a power-down state