P

Inventor

YOKOYAMA NAOKI

JP74 patents
⚠️ This page may combine multiple inventors who share the name “YOKOYAMA NAOKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJITSU LTD

25 patents
US4903090AFeb 20, 1990

Semiconductor device

FUJITSU LTD54 citations96
US4609903ASep 2, 1986

Thin film resistor for an integrated circuit semiconductor device

FUJITSU LTD84 citations94
US5536967AJul 16, 1996

Semiconductor device including Schottky gate of silicide and method for the manufacture of the same

FUJITSU LTD20 citations93
US5311465AMay 10, 1994

Semiconductor memory device that uses a negative differential resistance

FUJITSU LTD34 citations93
US4821090AApr 11, 1989

Compound semiconductor integrated circuit device

FUJITSU LTD39 citations93
US4712121ADec 8, 1987

High-speed semiconductor device

FUJITSU LTD39 citations93
US4566021AJan 21, 1986

Semiconductor device

FUJITSU LTD36 citations93
US5889296AMar 30, 1999

Semiconductor optical device and an optical processing system that uses such a semiconductor optical system

FUJITSU LTD39 citations92
US5389804AFeb 14, 1995

Resonant-tunneling heterojunction bipolar transistor device

FUJITSU LTD24 citations92
US5130766AJul 14, 1992

Quantum interference type semiconductor device

FUJITSU LTD25 citations92
US4889831ADec 26, 1989

Method of forming a high temperature stable ohmic contact to a III-V substrate

FUJITSU LTD50 citations92
US4617724AOct 21, 1986

Process for fabricating heterojunction bipolar transistor with low base resistance

FUJITSU LTD44 citations92
US4849934AJul 18, 1989

Logic circuit using resonant-tunneling transistor

FUJITSU LTD21 citations82
US5200349AApr 6, 1993

Semiconductor device including schotky gate of silicide and method for the manufacture of the same

FUJITSU LTD18 citations74
US5021863AJun 4, 1991

Semiconductor quantum effect device having negative differential resistance characteristics

FUJITSU LTD9 citations74
US5003360AMar 26, 1991

Semiconductor functional element

FUJITSU LTD16 citations74
US4989052AJan 29, 1991

Quantum effect semiconductor device

FUJITSU LTD17 citations74
US5677551AOct 14, 1997

Semiconductor optical device and an optical processing system that uses such a semiconductor optical system

FUJITSU LTD14 citations73
US5151618ASep 29, 1992

Resonant-tunneling heterojunction bipolar transistor device

FUJITSU LTD11 citations73
US5031005AJul 9, 1991

Semiconductor device

FUJITSU LTD8 citations73
US5027179AJun 25, 1991

Resonant-tunneling heterojunction bipolar transistor device

FUJITSU LTD8 citations73
US4837178AJun 6, 1989

Method for producing a semiconductor integrated circuit having an improved isolation structure

FUJITSU LTD7 citations73
US4956681ASep 11, 1990

Ternary logic circuit using resonant-tunneling transistors

FUJITSU LTD5 citations63
US9355916B2May 31, 2016

Semiconductor manufacturing method and semiconductor device

FUJITSU LTD2 citations62
US5214297AMay 25, 1993

High-speed semiconductor device

FUJITSU LTD2 citations62

DENSO CORP

6 patents

KAWASAKI HEAVY IND LTD

2 patents

HITACHI INT ELECTRIC INC

2 patents

KOKUSAI ELECTRIC CO LTD

1 patent

MATSUSHITA REFRIGERATION

1 patent

JAPAN RADIO CO LTD

1 patent

OPTREX KK

1 patent

YAMADA ATSUSHI

1 patent

MATSUDA YOSHIHARU

1 patent

MATSUMOTO AKIRA

1 patent

NIPPON STEEL CHEMICAL CO

1 patent

NIPPON STEEL CHEMICAL & MAT CO LTD

1 patent

OGAWA NOBUHIRO

1 patent

HITACHI CHEMICAL CO LTD

1 patent

CATALER CORP

1 patent

SONY CORP

1 patent

NIPPON KOKAN KK

1 patent

SEIKO EPSON CORP

1 patent

Showing the top 50 of 74 patents by PatentIndex Score.