Inventor
WEGE STEPHAN
DE26 patents
⚠️ This page may combine multiple inventors who share the name “WEGE STEPHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
18 patentsUS6479373B2Nov 12, 2002
Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
INFINEON TECHNOLOGIES AG237 citations95
US6153492ANov 28, 2000
Method for improving the readability of alignment marks
INFINEON TECHNOLOGIES AG33 citations91
US6583020B2Jun 24, 2003
Method for fabricating a trench isolation for electrically active components
INFINEON TECHNOLOGIES AG13 citations82
US6511918B2Jan 28, 2003
Method of structuring a metal-containing layer
INFINEON TECHNOLOGIES AG15 citations77
US7544270B2Jun 9, 2009
Apparatus for processing a substrate
INFINEON TECHNOLOGIES AG8 citations76
US6541372B2Apr 1, 2003
Method for manufacturing a conductor structure for an integrated circuit
INFINEON TECHNOLOGIES AG10 citations73
US6919269B2Jul 19, 2005
Production method for a semiconductor component
INFINEON TECHNOLOGIES AG9 citations72
US6693022B2Feb 17, 2004
CVD method of producing in situ-doped polysilicon layers and polysilicon layered structures
INFINEON TECHNOLOGIES AG6 citations70
US7141507B2Nov 28, 2006
Method for production of a semiconductor structure
INFINEON TECHNOLOGIES AG9 citations69
US7368390B2May 6, 2008
Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process
INFINEON TECHNOLOGIES AG6 citations61
US7265023B2Sep 4, 2007
Fabrication method for a semiconductor structure
INFINEON TECHNOLOGIES AG5 citations58
US6596625B2Jul 22, 2003
Method and device for producing a metal/metal contact in a multilayer metallization of an integrated circuit
INFINEON TECHNOLOGIES AG3 citations54
US6380076B2Apr 30, 2002
Dielectric filling of electrical wiring planes
INFINEON TECHNOLOGIES AG1 citations51
US7037777B2May 2, 2006
Process for producing an etching mask on a microstructure, in particular a semiconductor structure with trench capacitors, and corresponding use of the etching mask
INFINEON TECHNOLOGIES AG0 citations50
US6380074B1Apr 30, 2002
Deposition of various base layers for selective layer growth in semiconductor production
INFINEON TECHNOLOGIES AG0 citations48
US6436731B2Aug 20, 2002
Method of producing a semiconductor device comprising a cleaning process for removing silicon-containing material
INFINEON TECHNOLOGIES AG0 citations46
US7105404B2Sep 12, 2006
Method for fabricating a semiconductor structure
INFINEON TECHNOLOGIES AG0 citations41
US6821894B2Nov 23, 2004
CMP process
INFINEON TECHNOLOGIES AG0 citations40