Inventor
IGARASHI MOTOSHIGE
JP31 patents
⚠️ This page may combine multiple inventors who share the name “IGARASHI MOTOSHIGE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS TECH CORP
14 patentsUS7045865B2May 16, 2006
Semiconductor device with resistor elements formed on insulating film
RENESAS TECH CORP18 citations92
US7439153B2Oct 21, 2008
Semiconductor device and manufacturing method thereof for reducing the area of the memory cell region
RENESAS TECH CORP25 citations91
US6683351B2Jan 27, 2004
Semiconductor device having structures that can avoid deterioration caused by the manufacturing processing
RENESAS TECH CORP23 citations90
US6838777B2Jan 4, 2005
Semiconductor device and method of manufacturing the same
RENESAS TECH CORP7 citations74
US6818932B2Nov 16, 2004
Semiconductor device with improved soft error resistance
RENESAS TECH CORP7 citations74
US6720626B1Apr 13, 2004
Semiconductor device having improved gate structure
RENESAS TECH CORP8 citations74
US6838732B2Jan 4, 2005
Semiconductor device and method for manufacturing the same
RENESAS TECH CORP11 citations73
US6853030B2Feb 8, 2005
Semiconductor device including multiple field effect transistors, with first FETs having oxide spacers and the second FETs having oxide nitride oxidation protection
RENESAS TECH CORP9 citations72
US6841459B2Jan 11, 2005
Method of manufacturing semiconductor device
RENESAS TECH CORP2 citations63
US6815839B2Nov 9, 2004
Soft error resistant semiconductor memory device
RENESAS TECH CORP3 citations63
US6835647B2Dec 28, 2004
Semiconductor device including a plurality of interconnection layers, manufacturing method thereof and method of designing semiconductor circuit used in the manufacturing method
RENESAS TECH CORP2 citations62
US6730976B2May 4, 2004
Multilayer gate electrode structure with tilted on implantation
RENESAS TECH CORP4 citations62
US7663193B2Feb 16, 2010
Semiconductor device and manufacturing method thereof for reducing the area of the memory cell region
RENESAS TECH CORP4 citations61
US6753246B2Jun 22, 2004
Semiconductor device with a first dummy pattern
RENESAS TECH CORP1 citations51
MITSUBISHI ELECTRIC CORP
10 patentsUS6288447B1Sep 11, 2001
Semiconductor device including a plurality of interconnection layers
MITSUBISHI ELECTRIC CORP171 citations98
US6693820B2Feb 17, 2004
Soft error resistant semiconductor memory device
MITSUBISHI ELECTRIC CORP31 citations93
US6563148B2May 13, 2003
Semiconductor device with dummy patterns
MITSUBISHI ELECTRIC CORP22 citations92
US6299314B1Oct 9, 2001
Semiconductor device with electrical isolation means
MITSUBISHI ELECTRIC CORP16 citations92
US6037630AMar 14, 2000
Semiconductor device with gate electrode portion and method of manufacturing the same
MITSUBISHI ELECTRIC CORP22 citations92
US6541823B1Apr 1, 2003
Semiconductor device including multiple field effect transistors and manufacturing method thereof
MITSUBISHI ELECTRIC CORP20 citations91
US6541862B2Apr 1, 2003
Semiconductor device including a plurality of interconnection layers, manufacturing method thereof and method of designing semiconductor circuit used in the manufacturing method
MITSUBISHI ELECTRIC CORP6 citations73
US6468857B2Oct 22, 2002
Method for forming a semiconductor device having a plurality of circuits parts
MITSUBISHI ELECTRIC CORP10 citations73
US6165878ADec 26, 2000
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP13 citations72
US6593214B1Jul 15, 2003
Method of manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP3 citations63
RENESAS ELECTRONICS CORP
3 patentsUS7821078B2Oct 26, 2010
Semiconductor device having resistor elements and method for manufacturing the same
RENESAS ELECTRONICS CORP4 citations63
US7821076B2Oct 26, 2010
Semiconductor device
RENESAS ELECTRONICS CORP2 citations62
US7982271B2Jul 19, 2011
Semiconductor device
RENESAS ELECTRONICS CORP0 citations51