Inventor
YING JI-FENG
US42 patents
⚠️ This page may combine multiple inventors who share the name “YING JI-FENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
34 patentsUS11088201B2Aug 10, 2021
Magnetic tunneling junction (MTJ) element with an amorphous buffer layer and its fabrication process
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations86
US11165012B2Nov 2, 2021
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10753990B2Aug 25, 2020
Method and apparatus for measuring magnetic field strength
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10541269B2Jan 21, 2020
Magnetic random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US11672185B2Jun 6, 2023
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11289538B2Mar 29, 2022
Memory device and semiconductor die, and method of fabricating memory device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11659718B2May 23, 2023
Magnetic random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11238911B2Feb 1, 2022
Method for writing to magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10916286B2Feb 9, 2021
Assisted write method for MRAM testing and field applications
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10727401B2Jul 28, 2020
Magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10685693B2Jun 16, 2020
Method for writing to magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US10672832B2Jun 2, 2020
Magnetic detection circuit, MRAM and operation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US10403385B2Sep 3, 2019
Apparatus for memory device testing and field applications
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11842757B2Dec 12, 2023
Crystal seed layer for magnetic random access memory (MRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US11527275B2Dec 13, 2022
Crystal seed layer for magnetic random access memory (MRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US10883820B2Jan 5, 2021
Apparatus and method for metrology
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12029046B2Jul 2, 2024
Magnetic tunneling junction (MTJ) element with an amorphous buffer layer and its fabrication process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12382841B2Aug 5, 2025
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12300293B2May 13, 2025
Method for writing to magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12302587B2May 13, 2025
Memory device and semiconductor die, and method of fabricating memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12082511B2Sep 3, 2024
Magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12075631B2Aug 27, 2024
Magnetic random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12035636B2Jul 9, 2024
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11825664B2Nov 21, 2023
Memory device and semiconductor die, and method of fabricating memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11762046B2Sep 19, 2023
Method and apparatus for measuring magnetic field strength
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11727974B2Aug 15, 2023
Method for writing to magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11374169B2Jun 28, 2022
Magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11244714B2Feb 8, 2022
Assisted write method for magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11004901B2May 11, 2021
Magnetic random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12424255B2Sep 23, 2025
Crystal seed layer for magnetic random access memory (MRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11525668B2Dec 13, 2022
Apparatus and method for metrology
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10868079B2Dec 15, 2020
Magnetic detection circuit, MRAM and operation method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10861574B2Dec 8, 2020
Apparatus for memory device testing and field applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10510410B2Dec 17, 2019
Method for programming resistive memory cell with AC perturbation AC signal and nonvolatile memory device thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
WESTERN DIGITAL FREMONT LLC
4 patentsUS7719795B2May 18, 2010
Head having a transducer heater and an air bearing surface with a flow-diversion dam and pressure-relief trough disposed upstream of the transducer
WESTERN DIGITAL FREMONT LLC166 citations98
US7616405B2Nov 10, 2009
Slider with an air bearing surface having a inter-cavity dam with OD and ID dam surfaces of different heights
WESTERN DIGITAL FREMONT LLC51 citations93
US7477486B1Jan 13, 2009
Air bearing slider with a side pad having a shallow recess depth
WESTERN DIGITAL FREMONT LLC48 citations92
US7289299B1Oct 30, 2007
Air bearing slider with three-projection trailing center pad
WESTERN DIGITAL FREMONT LLC46 citations92
WESTERN DIGITAL TECH INC
2 patentsUS7019945B1Mar 28, 2006
Air bearing slider including pressurized side pads with forward and trailing shallow etched surfaces
WESTERN DIGITAL TECH INC56 citations93
US6912103B1Jun 28, 2005
Method of operating a disk drive with a slider at loading and unloading fly heights greater than an operational fly height
WESTERN DIGITAL TECH INC41 citations92