Inventor
KAMEI HIDENORI
JP27 patents
⚠️ This page may combine multiple inventors who share the name “KAMEI HIDENORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
11 patentsUS7023019B2Apr 4, 2006
Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD212 citations98
US7422504B2Sep 9, 2008
Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD71 citations97
US6365923B1Apr 2, 2002
Nitride semiconductor light-emitting element and process for production thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US6445127B1Sep 3, 2002
Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations91
US6307219B1Oct 23, 2001
Light-emitting device comprising gallium-nitride-group compound semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations91
US6090211AJul 18, 2000
Apparatus and method for forming semiconductor thin layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD45 citations90
US6051847AApr 18, 2000
Gallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin film
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD36 citations88
US6497944B1Dec 24, 2002
Light-emitting device comprising a gallium-nitride-group compound-semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD14 citations83
US7056755B1Jun 6, 2006
P-type nitride semiconductor and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations79
US6841800B2Jan 11, 2005
Light-emitting device comprising a gallium-nitride-group compound-semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations72
US7002184B2Feb 21, 2006
Light-emitting device comprising a gallum-nitride-group compound-semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations51
PANASONIC CORP
8 patentsUS7951625B2May 31, 2011
Semiconductor light emitting element and method for manufacturing semiconductor light emitting device
PANASONIC CORP22 citations92
US7629620B2Dec 8, 2009
Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
PANASONIC CORP19 citations92
US7592639B2Sep 22, 2009
Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
PANASONIC CORP19 citations92
US7601985B2Oct 13, 2009
Semiconductor light-emitting device
PANASONIC CORP7 citations73
US7772769B2Aug 10, 2010
Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device
PANASONIC CORP3 citations62
US7915714B2Mar 29, 2011
Semiconductor light emitting element and wafer
PANASONIC CORP2 citations54
USRE47453EJun 25, 2019
Luminescent layer and light-emitting semiconductor device
PANASONIC CORP0 citations52
US7863623B2Jan 4, 2011
Semiconductor light emitting device
PANASONIC CORP0 citations52
SUMITOMO ELECTRIC INDUSTRIES
2 patentsKINOSHITA YOSHITAKA
2 patentsUS8178889B2May 15, 2012
Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region
KINOSHITA YOSHITAKA2 citations60
US8076679B2Dec 13, 2011
Nitride-based semiconductor light-emitting diode and illuminating device
KINOSHITA YOSHITAKA5 citations60