Inventor · disambiguated record
Kuo-Yu Cheng
Also filed as: CHENG KUO-YU
11 granted patents·1 pending application·13 citations·filing 2013–2024
84Inventor score
Top patents by PatentIndex Score
12 records- 0189US9761546B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·5 cites·20 claims
- 0281US9711521B2Substrate fabrication method to improve RF (radio frequency) device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·4 cites·20 claims
- 0367US9048287B1Mechanisms for forming semiconductor device structure with floating spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 2, 2015·2 cites·17 claims
- 0464US11121100B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 0563US9799557B2Semiconductor device structure with metal ring on silicon-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 24, 2017·1 cites·18 claims
- 0662US8941211B2Integrated circuit using deep trench through silicon (DTS)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·1 cites·20 claims
- 0758US11121098B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 14, 2021·0 cites·20 claims
- 0858US2025261387A1Semiconductor structure and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0953US9230988B2Mechanisms for forming radio frequency (RF) area of integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 5, 2016·0 cites·20 claims
- 1050US9589831B2Mechanisms for forming radio frequency (RF) area of integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·0 cites·20 claims
- 1146US10090327B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 2, 2018·0 cites·19 claims
- 1245US9343352B2Integrated circuit using deep trench through silicon (DTS)TAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 17, 2016·0 cites·20 claims
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