Inventor
TSAI WEI-KUNG
TW17 patents
⚠️ This page may combine multiple inventors who share the name “TSAI WEI-KUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
14 patentsUS9761546B2Sep 12, 2017
Trap layer substrate stacking technique to improve performance for RF devices
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US9711521B2Jul 18, 2017
Substrate fabrication method to improve RF (radio frequency) device performance
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US10515949B2Dec 24, 2019
Integrated circuit and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US11158534B2Oct 26, 2021
SOI substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121100B2Sep 14, 2021
Trap layer substrate stacking technique to improve performance for RF devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121098B2Sep 14, 2021
Trap layer substrate stacking technique to improve performance for RF devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10304723B1May 28, 2019
Process to form SOI substrate
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9048287B1Jun 2, 2015
Mechanisms for forming semiconductor device structure with floating spacer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations61
US11264378B2Mar 1, 2022
Integrated circuit
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US9589831B2Mar 7, 2017
Mechanisms for forming radio frequency (RF) area of integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9230988B2Jan 5, 2016
Mechanisms for forming radio frequency (RF) area of integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9799557B2Oct 24, 2017
Semiconductor device structure with metal ring on silicon-on-insulator (SOI) substrate
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations50
US11063117B2Jul 13, 2021
Semiconductor device structure having carrier-trapping layers with different grain sizes
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10090327B2Oct 2, 2018
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40
TAIWAN SEMICONDUCTOR MFG
3 patentsUS6946391B2Sep 20, 2005
Method for forming dual damascenes
TAIWAN SEMICONDUCTOR MFG14 citations79
US9343352B2May 17, 2016
Integrated circuit using deep trench through silicon (DTS)
TAIWAN SEMICONDUCTOR MFG0 citations51
US8941211B2Jan 27, 2015
Integrated circuit using deep trench through silicon (DTS)
TAIWAN SEMICONDUCTOR MFG1 citations51