P

Inventor

TSAI WEI-KUNG

TW17 patents
⚠️ This page may combine multiple inventors who share the name “TSAI WEI-KUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

14 patents
US9761546B2Sep 12, 2017

Trap layer substrate stacking technique to improve performance for RF devices

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US9711521B2Jul 18, 2017

Substrate fabrication method to improve RF (radio frequency) device performance

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations71
US10515949B2Dec 24, 2019

Integrated circuit and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations70
US11158534B2Oct 26, 2021

SOI substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121100B2Sep 14, 2021

Trap layer substrate stacking technique to improve performance for RF devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121098B2Sep 14, 2021

Trap layer substrate stacking technique to improve performance for RF devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10304723B1May 28, 2019

Process to form SOI substrate

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US9048287B1Jun 2, 2015

Mechanisms for forming semiconductor device structure with floating spacer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations61
US11264378B2Mar 1, 2022

Integrated circuit

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US9589831B2Mar 7, 2017

Mechanisms for forming radio frequency (RF) area of integrated circuit structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9230988B2Jan 5, 2016

Mechanisms for forming radio frequency (RF) area of integrated circuit structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9799557B2Oct 24, 2017

Semiconductor device structure with metal ring on silicon-on-insulator (SOI) substrate

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations50
US11063117B2Jul 13, 2021

Semiconductor device structure having carrier-trapping layers with different grain sizes

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US10090327B2Oct 2, 2018

Semiconductor device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations40

TAIWAN SEMICONDUCTOR MFG

3 patents