Inventor
LIU DAVID K Y
US52 patents
⚠️ This page may combine multiple inventors who share the name “LIU DAVID K Y”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
11 patentsUS5590076ADec 31, 1996
Channel hot-carrier page write
ADVANCED MICRO DEVICES INC39 citations93
US5534455AJul 9, 1996
Method for protecting a stacked gate edge in a semiconductor device from self aligned source (SAS) etch
ADVANCED MICRO DEVICES INC26 citations93
US5470773ANov 28, 1995
Method protecting a stacked gate edge in a semiconductor device from self aligned source (SAS) etch
ADVANCED MICRO DEVICES INC26 citations93
US5814864ASep 29, 1998
Semiconductor circuit including non-ESD transistors with reduced degradation due to an impurity implant
ADVANCED MICRO DEVICES INC5 citations74
US5693972ADec 2, 1997
Method and system for protecting a stacked gate edge in a semiconductor device from self-aligned source (sas) etch in a semiconductor device
ADVANCED MICRO DEVICES INC6 citations74
US5652155AJul 29, 1997
Method for making semiconductor circuit including non-ESD transistors with reduced degradation due to an impurity implant
ADVANCED MICRO DEVICES INC8 citations74
US5624859AApr 29, 1997
Method for providing device isolation and off-state leakage current for a semiconductor device
ADVANCED MICRO DEVICES INC12 citations74
US5541875AJul 30, 1996
High energy buried layer implant to provide a low resistance p-well in a flash EPROM array
ADVANCED MICRO DEVICES INC17 citations74
US5517443AMay 14, 1996
Method and system for protecting a stacked gate edge in a semi-conductor device from self aligned source (SAS) etch in a semi-conductor device
ADVANCED MICRO DEVICES INC10 citations74
US5656509AAug 12, 1997
Method and test structure for determining gouging in a flash EPROM cell during SAS etch
ADVANCED MICRO DEVICES INC4 citations63
US5596531AJan 21, 1997
Method for decreasing the discharge time of a flash EPROM cell
ADVANCED MICRO DEVICES INC5 citations60
PROGRESSANT TECHNOLOGIES INC
8 patentsUS6479862B1Nov 12, 2002
Charge trapping device and method for implementing a transistor having a negative differential resistance mode
PROGRESSANT TECHNOLOGIES INC148 citations99
US6596617B1Jul 22, 2003
CMOS compatible process for making a tunable negative differential resistance (NDR) device
PROGRESSANT TECHNOLOGIES INC35 citations96
US6512274B1Jan 28, 2003
CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same
PROGRESSANT TECHNOLOGIES INC43 citations96
US7067873B2Jun 27, 2006
Charge trapping device
PROGRESSANT TECHNOLOGIES INC6 citations74
US6693027B1Feb 17, 2004
Method for configuring a device to include a negative differential resistance (NDR) characteristic
PROGRESSANT TECHNOLOGIES INC6 citations74
US6686631B1Feb 3, 2004
Negative differential resistance (NDR) device and method of operating same
PROGRESSANT TECHNOLOGIES INC9 citations74
US6680245B1Jan 20, 2004
Method for making both a negative differential resistance (NDR) device and a non-NDR device using a common MOS process
PROGRESSANT TECHNOLOGIES INC6 citations74
US6972465B2Dec 6, 2005
CMOS process compatible, tunable negative differential resistance (NDR) device and method of operating same
PROGRESSANT TECHNOLOGIES INC1 citations63
LIU DAVID K Y
8 patentsUS9570175B2Feb 14, 2017
Incrementally programmable non-volatile memory
LIU DAVID K Y5 citations84
US8305805B2Nov 6, 2012
Common drain non-volatile multiple-time programmable memory
LIU DAVID K Y10 citations84
US8203861B2Jun 19, 2012
Non-volatile one-time—programmable and multiple-time programmable memory configuration circuit
LIU DAVID K Y5 citations74
US9324438B2Apr 26, 2016
Method of operating incrementally programmable non-volatile memory
LIU DAVID K Y3 citations73
US8988103B2Mar 24, 2015
Capacitively coupled logic gate
LIU DAVID K Y5 citations73
US8300470B2Oct 30, 2012
Two terminal programmable hot channel electron non-volatile memory
LIU DAVID K Y3 citations63
US9305931B2Apr 5, 2016
Zero cost NVM cell using high voltage devices in analog process
LIU DAVID K Y0 citations52
US8582342B2Nov 12, 2013
Non-volatile one-time-programmable and multiple-time programmable memory configuration circuit
LIU DAVID K Y0 citations52
JONKER LLC
7 patentsUS9570161B2Feb 14, 2017
Method of operating incrementally programmable non-volatile memory
JONKER LLC6 citations84
US10839086B2Nov 17, 2020
Method of operating ephemeral peripheral device
JONKER LLC3 citations73
US10115467B2Oct 30, 2018
One time accessible (OTA) non-volatile memory
JONKER LLC5 citations73
US11687660B2Jun 27, 2023
Ephemeral peripheral device
JONKER LLC0 citations63
US11783898B2Oct 10, 2023
Ephemeral storage elements, circuits, and systems
JONKER LLC0 citations52
US10061738B2Aug 28, 2018
Ephemeral peripheral device
JONKER LLC1 citations52
US9558813B2Jan 31, 2017
Method of operating incrementally programmable non-volatile memory
JONKER LLC0 citations52
AMIC TECHNOLOGY INC
5 patentsUS5930174AJul 27, 1999
Circuit and method for erasing flash memory array
AMIC TECHNOLOGY INC55 citations96
US5995418ANov 30, 1999
Circuit and method for erasing flash memory array
AMIC TECHNOLOGY INC22 citations92
US5912836AJun 15, 1999
Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array
AMIC TECHNOLOGY INC33 citations92
US6188604B1Feb 13, 2001
Flash memory cell & array with improved pre-program and erase characteristics
AMIC TECHNOLOGY INC17 citations84
US6185133B1Feb 6, 2001
Flash EPROM using junction hot hole injection for erase
AMIC TECHNOLOGY INC13 citations74
(unassigned)
3 patentsUS5814854ASep 29, 1998
Highly scalable FLASH EEPROM cell
68 citations95
US5751631AMay 12, 1998
Flash memory cell and a new method for sensing the content of the new memory cell
71 citations95
US6091636AJul 18, 2000
Flash memory cell and a new method for sensing the content of the new memory cell
19 citations92
ALTERA CORP
2 patentsTEXAS INSTRUMENTS INC
2 patentsINVENSAS CORP
2 patentsUS8705263B2Apr 22, 2014
Non-volatile one-time-programmable and multiple-time programmable memory configuration circuit
INVENSAS CORP2 citations63
US8599612B2Dec 3, 2013
Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data
INVENSAS CORP1 citations63
PROGRESSENT TECHNOLOGIES INC
1 patentSYNOPSYS INC
1 patentShowing the top 50 of 52 patents by PatentIndex Score.