P

Inventor

BATRES MAX

US29 patents
⚠️ This page may combine multiple inventors who share the name “BATRES MAX”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CREE INC

8 patents
US7335920B2Feb 26, 2008

LED with current confinement structure and surface roughening

CREE INC168 citations99
US8372204B2Feb 12, 2013

Susceptor for MOCVD reactor

CREE INC549 citations98
US7122844B2Oct 17, 2006

Susceptor for MOCVD reactor

CREE INC335 citations98
US8034647B2Oct 11, 2011

LED with substrate modifications for enhanced light extraction and method of making same

CREE INC34 citations96
US8366830B2Feb 5, 2013

Susceptor apparatus for inverted type MOCVD reactor

CREE INC23 citations92
US7534633B2May 19, 2009

LED with substrate modifications for enhanced light extraction and method of making same

CREE INC21 citations92
US10199360B2Feb 5, 2019

Wire bond free wafer level LED

CREE INC1 citations62
US8772792B2Jul 8, 2014

LED with surface roughening

CREE INC0 citations52

GLO AB

6 patents
US10707374B2Jul 7, 2020

Etendue enhancement for light emitting diode subpixels

GLO AB11 citations80
US11264539B2Mar 1, 2022

Light emitting diodes containing deactivated regions and methods of making the same

GLO AB3 citations73
US11069837B2Jul 20, 2021

Sub pixel light emitting diodes for direct view display and methods of making the same

GLO AB2 citations73
US10804436B2Oct 13, 2020

Light emitting diode containing oxidized metal contacts

GLO AB3 citations72
US11127720B2Sep 21, 2021

Pixel repair method for a direct view display device

GLO AB3 citations64
US11710805B2Jul 25, 2023

Light emitting diode containing oxidized metal contacts

GLO AB0 citations62

DENBAARS STEVEN P

3 patents
US8541788B2Sep 24, 2013

LED with current confinement structure and surface roughening

DENBAARS STEVEN P9 citations83
US8410490B2Apr 2, 2013

LED with current confinement structure and surface roughening

DENBAARS STEVEN P8 citations83
US8410499B2Apr 2, 2013

LED with a current confinement structure aligned with a contact

DENBAARS STEVEN P2 citations62

BATRES MAX

2 patents
US8686431B2Apr 1, 2014

Gallium and nitrogen containing trilateral configuration for optical devices

BATRES MAX15 citations88
US8617909B2Dec 31, 2013

LED with substrate modifications for enhanced light extraction and method of making same

BATRES MAX6 citations82

APPLIED MATERIALS INC

2 patents
US11837683B2Dec 5, 2023

Indium-gallium-nitride light emitting diodes with increased red-light quantum efficiency

APPLIED MATERIALS INC0 citations58
US12336336B2Jun 17, 2025

Indium-gallium-nitride light emitting diodes with light reflecting mirrors

APPLIED MATERIALS INC0 citations48

NAKAMURA SHUJI

1 patent
US8133322B2Mar 13, 2012

Apparatus for inverted multi-wafer MOCVD fabrication

NAKAMURA SHUJI21 citations92

KELLER BERND

1 patent
US9634191B2Apr 25, 2017

Wire bond free wafer level LED

KELLER BERND14 citations84

PALO ALTO RES CT INC

1 patent
US10249786B2Apr 2, 2019

Thin film and substrate-removed group III-nitride based devices and method

PALO ALTO RES CT INC2 citations73

FELKER ANDREW J

1 patent
US8912025B2Dec 16, 2014

Method for manufacture of bright GaN LEDs using a selective removal process

FELKER ANDREW J6 citations65

SAMSUNG ELECTRONICS CO LTD

1 patent
US12527128B2Jan 13, 2026

Light emitting diodes containing deactivated regions and methods of making the same

SAMSUNG ELECTRONICS CO LTD0 citations62

NANOSYS INC

1 patent
US11908974B2Feb 20, 2024

Light emitting diodes containing deactivated regions and methods of making the same

NANOSYS INC0 citations62

SORAA INC

1 patent
US9076926B2Jul 7, 2015

Gallium and nitrogen containing trilateral configuration for optical devices

SORAA INC0 citations49

GENESEE VALLEY INNOVATIONS LLC

1 patent
US12543423B2Feb 3, 2026

Resonant cavity micro-LED array using embedded reflector

GENESEE VALLEY INNOVATIONS LLC0 citations44