Inventor

LAVOIE CHRISTIAN

US176 patents

⚠️ This page may combine multiple inventors who share the name “LAVOIE CHRISTIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LAVOIE CHRISTIAN

IBM

Self-aligned silicide process for silicon sidewall source and drain contacts

Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby

Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby

Method and structure for controlling the interface roughness of cobalt disilicide

Chip mode isolation and cross-talk reduction through buried metal layers and through-vias

Chip mode isolation and cross-talk reduction through buried metal layers and through-vias

Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridging

Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same

Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same

Method and structure for reducing contact resistance between silicide contact and overlying metallization

MOSFET structure with multiple self-aligned silicide contacts

Method for increasing the capacitance of a trench capacitor

Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby

Reduction of silicide formation temperature on SiGe containing substrates

Method for forming self-aligned dual fully silicided gates in CMOS devices

Elevated source drain disposable spacer CMOS

Method for forming self-aligned dual salicide in CMOS technologies

Method of forming ultra-thin silicidation-stop extensions in mosfet devices

Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow junctions

Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy

Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby

Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned COSI2 on raised source drain Si/SiGe device

Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices

Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy

Self-aligned process for nanotube/nanowire FETs

Method and structure for retarding high temperature agglomeration of silicides using alloys

Pre-anneal of CoSi, to prevent formation of amorphous layer between Ti-O-N and CoSi

Self-aligned liner formed on metal semiconductor alloy contacts

Fin eFuse formed by trench silicide process

Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same

Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor device

Method for forming a protection layer over metal semiconductor contact and structure formed thereon

Varying capacitance voltage contrast structures to determine defect resistance

Method and structure for reducing contact resistance between silicide contact and overlying metallization

MOSFET structure with multiple self-aligned silicide contacts

Bipolar transistor with silicided sub-collector

Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device

Method for integration of silicide contacts and silicide gate metals

Liner-free tungsten contact

GLOBALFOUNDRIES INC

FinFET source-drain merged by silicide-based material

FinFET source-drain merged by silicide-based material

Oxide mediated epitaxial nickel disilicide alloy contact formation

Oxide mediated epitaxial nickel disilicide alloy contact formation

(unassigned)

Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap

Optical apparatus and method for measuring temperature of a substrate material with a temperature dependent band gap

LAVOIE CHRISTIAN

Metal-semiconductor intermixed regions

Liner-free tungsten contact

AVOURIS PHAEDON

Self-aligned process for nanotube/nanowire FETs

GUILLORN MICHAEL A

Method to form silicide contact in trenches

BOL AGEETH A

Graphene formation utilizing solid phase carbon sources