Inventor
ZHANG ZHE-HAO
TW26 patents
⚠️ This page may combine multiple inventors who share the name “ZHANG ZHE-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
24 patentsUS10546956B2Jan 28, 2020
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations94
US10811516B2Oct 20, 2020
Structure and formation method of semiconductor device structure with gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10164050B2Dec 25, 2018
Structure and formation method of semiconductor device structure with gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9653605B2May 16, 2017
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9564528B2Feb 7, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US9853154B2Dec 26, 2017
Embedded source or drain region of transistor with downward tapered region under facet region
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9799771B2Oct 24, 2017
FinFET and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US12051752B2Jul 30, 2024
Embedded source or drain region of transistor with downward tapered region under facet region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11721762B2Aug 8, 2023
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11705519B2Jul 18, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11631748B2Apr 18, 2023
Structure and formation method of semiconductor device structure with gate stack
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594635B2Feb 28, 2023
Embedded source or drain region of transistor with downward tapered region under facet region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11158744B2Oct 26, 2021
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11043593B2Jun 22, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964819B2Mar 30, 2021
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10840378B2Nov 17, 2020
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10804396B2Oct 13, 2020
Embedded source or drain region of transistor with downward tapered region under facet region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10686077B2Jun 16, 2020
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10340382B2Jul 2, 2019
Embedded source or drain region of transistor with downward tapered region under facet region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164109B2Dec 25, 2018
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10164108B2Dec 25, 2018
Fin field effect transistor (FinFET) device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10084060B2Sep 25, 2018
Semiconductor structure and manufacturing method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10483394B2Nov 19, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10043906B2Aug 7, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51