Inventor

VORONKOV VLADIMIR V

IT17 patents

⚠️ This page may combine multiple inventors who share the name “VORONKOV VLADIMIR V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VORONKOV VLADIMIR V

MEMC ELECTRONIC MATERIALS

Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations

High resistivity silicon structure and a process for the preparation thereof

Process for preparing a stabilized ideal oxygen precipitating silicon wafer

Method for the production of low defect density silicon

Single crystal silicon having improved gate oxide integrity

Process for preparing single crystal silicon having improved gate oxide integrity

Method for the production of low defect density silicon

GLOBALWAFERS CO LTD

Apparatus for stressing semiconductor substrates

Apparatus for stressing semiconductor substrates

Apparatus for stressing semiconductor substrates

Apparatus for stressing semiconductor substrates

SUNEDISON SEMICONDUCTOR LTD (UEN201334164H)

Processes and apparatus for preparing heterostructures with reduced strain by radial distension

Processes and apparatus for preparing heterostructures with reduced strain by radial compression

SUNEDISON SEMICONDUCTOR LTD UEN201334164H

Apparatus for stressing semiconductor substrates

MEMC ELECTRONIC MAT S P A

Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method

FALSTER ROBERT J

Processes for suppressing minority carrier lifetime degradation in silicon wafers

SUNEDISON SEMICONDUCTOR LTD

Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei