Inventor
FALLAHAZAD BABAK
US12 patents
Patents
12 patentsUS11094782B1Aug 17, 2021
Gate-all-around integrated circuit structures having depopulated channel structures
INTEL CORP8 citations83
US12369358B2Jul 22, 2025
Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devices
INTEL CORP2 citations73
US11437483B2Sep 6, 2022
Gate-all-around integrated circuit structures having dual nanoribbon channel structures
INTEL CORP2 citations72
US12249622B2Mar 11, 2025
Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applications
INTEL CORP1 citations63
US12453145B2Oct 21, 2025
Single gated 3D nanowire inverter for high density thick gate SoC applications
INTEL CORP0 citations61
US12349411B2Jul 1, 2025
Gate-all-around integrated circuit structures having dual nanoribbon channel structures
INTEL CORP0 citations61
US11862703B2Jan 2, 2024
Gate-all-around integrated circuit structures having dual nanoribbon channel structures
INTEL CORP0 citations61
US11791380B2Oct 17, 2023
Single gated 3D nanowire inverter for high density thick gate SOC applications
INTEL CORP0 citations61
US11581404B2Feb 14, 2023
Gate-all-around integrated circuit structures having depopulated channel structures
INTEL CORP0 citations61
US12568682B2Mar 3, 2026
Nanoribbon thick gate device with hybrid dielectric tuning for high breakdown and VT modulation
INTEL CORP0 citations51
US12040395B2Jul 16, 2024
High voltage extended-drain MOS (EDMOS) nanowire transistors
INTEL CORP0 citations51
US11996403B2May 28, 2024
ESD diode solution for nanoribbon architectures
INTEL CORP0 citations50