Inventor
OGOH IKUO
JP18 patents
Patents
18 patentsUS5849616ADec 15, 1998
Method of manufacturing a semiconductor device
MITSUBISHI ELECTRIC CORP40 citations96
US5547885AAug 20, 1996
Method of making asymmetric LDD transistor
MITSUBISHI ELECTRIC CORP66 citations96
US5436482AJul 25, 1995
MOSFET with assymetric lightly doped source-drain regions
MITSUBISHI ELECTRIC CORP44 citations96
US5254866AOct 19, 1993
LDD CMOS with wider oxide sidewall on PMOS than NMOS
MITSUBISHI ELECTRIC CORP76 citations96
US5101250AMar 31, 1992
Electrically programmable non-volatile memory device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP99 citations94
US5323343AJun 21, 1994
DRAM device comprising a stacked type capacitor and a method of manufacturing thereof
MITSUBISHI ELECTRIC CORP33 citations92
US5101251AMar 31, 1992
Semiconductor memory device with improved stacked capacitor structure
MITSUBISHI ELECTRIC CORP38 citations92
US5231041AJul 27, 1993
Manufacturing method of an electrically programmable non-volatile memory device having the floating gate extending over the control gate
MITSUBISHI ELECTRIC CORP22 citations91
US6078079AJun 20, 2000
Semiconductor device and method of manufacturing the same
MITSUBISHI ELECTRIC CORP18 citations84
US4956692ASep 11, 1990
Semiconductor device having an isolation oxide film
MITSUBISHI ELECTRIC CORP11 citations74
US5153689AOct 6, 1992
Semiconductor memory device having bit lines formed of an interconnecting layer of lower reflectance material than the material of the word lines
MITSUBISHI ELECTRIC CORP14 citations73
US5097137AMar 17, 1992
Light irradiation apparatus used in manufacturing semiconductor device
MITSUBISHI ELECTRIC CORP7 citations73
US5075240ADec 24, 1991
Semiconductor device manufactured by using conductive ion implantation mask
MITSUBISHI ELECTRIC CORP8 citations73
US5001039AMar 19, 1991
Method of manufacturing semiconductor device comprising step of patterning resist and light irradiation apparatus used by the manufacturing method
MITSUBISHI ELECTRIC CORP8 citations73
US4905068AFeb 27, 1990
Semiconductor device having interconnection layers of T-shape cross section
MITSUBISHI ELECTRIC CORP16 citations73
US4903117AFeb 20, 1990
Semiconductor device
MITSUBISHI ELECTRIC CORP13 citations73
US5300444AApr 5, 1994
Method of manufacturing a semiconductor device having a stacked structure formed of polycrystalline silicon film and silicon oxide film
MITSUBISHI ELECTRIC CORP9 citations71
US4772569ASep 20, 1988
Method for forming oxide isolation films on french sidewalls
MITSUBISHI ELECTRIC CORP5 citations63