Inventor
HO YU-LAM
US5 patents
Patents
5 patentsUS5585286ADec 17, 1996
Implantation of a semiconductor substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant subsequently implanted into the substrate to form P- LDD region of a PMOS device
LSI LOGIC CORP39 citations91
US5468974ANov 21, 1995
Control and modification of dopant distribution and activation in polysilicon
LSI LOGIC CORP36 citations88
US6093936AJul 25, 2000
Integrated circuit with isolation of field oxidation by noble gas implantation
LSI LOGIC CORP9 citations72
US5717238AFeb 10, 1998
Substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant forming P-LDD region of a PMOS device
LSI LOGIC CORP8 citations72
US6432759B1Aug 13, 2002
Method of forming source and drain regions for CMOS devices
LSI LOGIC CORP1 citations49