Inventor
KAO CHI-YI
US5 patents
⚠️ This page may combine multiple inventors who share the name “KAO CHI-YI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
LSI LOGIC CORP
4 patentsUS5278103AJan 11, 1994
Method for the controlled formation of voids in doped glass dielectric films
LSI LOGIC CORP82 citations95
US5585286ADec 17, 1996
Implantation of a semiconductor substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant subsequently implanted into the substrate to form P- LDD region of a PMOS device
LSI LOGIC CORP39 citations91
US5719084AFeb 17, 1998
Method for the controlled formation of voids in doped glass dielectric films
LSI LOGIC CORP16 citations81
US5717238AFeb 10, 1998
Substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant forming P-LDD region of a PMOS device
LSI LOGIC CORP8 citations72