Inventor
NAGASAWA NAOMI
JP13 patents
Patents
13 patentsUS6610548B1Aug 26, 2003
Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory
SONY CORP71 citations96
US6577039B2Jun 10, 2003
Driving system and actuator
SONY CORP51 citations95
US6400489B1Jun 4, 2002
Solid-state displacement element, optical element, and interference filter
SONY CORP75 citations95
US6143679ANov 7, 2000
Layered crystal structure oxide
SONY CORP30 citations92
US6749686B2Jun 15, 2004
Crystal growth method of an oxide and multi-layered structure of oxides
SONY CORP15 citations84
US6927436B1Aug 9, 2005
Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory
SONY CORP5 citations73
US6106616AAug 22, 2000
Layer crystal structure oxide, production method thereof, and memory element using the same
SONY CORP7 citations73
US6932920B2Aug 23, 2005
Complex material, artificial light-emitting skin and artificial light-emitting body
SONY CORP5 citations62
US6207082B1Mar 27, 2001
Layer-structured oxide and process of producing the same
SONY CORP5 citations62
US6171871B1Jan 9, 2001
Ferroelectric memory device and their manufacturing methods
SONY CORP4 citations62
US4650726AMar 17, 1987
Ceramic substrate of Na2 O and Ta2 O5 for thin film magnetic head
SONY CORP3 citations62
US6174463B1Jan 16, 2001
Layer crystal structure oxide, production method thereof and memory element using the same
SONY CORP1 citations52
US4639400AJan 27, 1987
Ceramic substrate of Na2 O and Nb2 O5 for magnetic metal thin film
SONY CORP0 citations52