Inventor
AMI TAKAAKI
JP22 patents
⚠️ This page may combine multiple inventors who share the name “AMI TAKAAKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
20 patentsUS6610548B1Aug 26, 2003
Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory
SONY CORP71 citations96
US6577039B2Jun 10, 2003
Driving system and actuator
SONY CORP51 citations95
US6400489B1Jun 4, 2002
Solid-state displacement element, optical element, and interference filter
SONY CORP75 citations95
US6544857B1Apr 8, 2003
Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method
SONY CORP20 citations92
US6143679ANov 7, 2000
Layered crystal structure oxide
SONY CORP30 citations92
US6004392ADec 21, 1999
Ferroelectric capacitor and manufacturing the same using bismuth layered oxides
SONY CORP32 citations92
US6114199ASep 5, 2000
Manufacturing method for ferroelectric film and nonvolatile memory using the same
SONY CORP31 citations89
US6749686B2Jun 15, 2004
Crystal growth method of an oxide and multi-layered structure of oxides
SONY CORP15 citations84
US7754504B2Jul 13, 2010
Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diode
SONY CORP14 citations83
US6927436B1Aug 9, 2005
Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memory
SONY CORP5 citations73
US6106616AAug 22, 2000
Layer crystal structure oxide, production method thereof, and memory element using the same
SONY CORP7 citations73
US9911894B2Mar 6, 2018
Nitride-based III-V group compound semiconductor
SONY CORP2 citations72
US6207082B1Mar 27, 2001
Layer-structured oxide and process of producing the same
SONY CORP5 citations62
US6171871B1Jan 9, 2001
Ferroelectric memory device and their manufacturing methods
SONY CORP4 citations62
US5976624ANov 2, 1999
Process for producing bismuth compounds, and bismuth compounds
SONY CORP2 citations62
US5935549AAug 10, 1999
Method of producing bismuth layered compound
SONY CORP3 citations62
US6174463B1Jan 16, 2001
Layer crystal structure oxide, production method thereof and memory element using the same
SONY CORP1 citations52
US6995069B2Feb 7, 2006
Dielectric capacitor manufacturing method and semiconductor storage device manufacturing method
SONY CORP0 citations51
US6251360B1Jun 26, 2001
Method of producing bismuth layered compound
SONY CORP0 citations51
US5904766AMay 18, 1999
Process for preparing bismuth compounds
SONY CORP0 citations51