Inventor

GLASSMAN TIMOTHY E

US16 patents

⚠️ This page may combine multiple inventors who share the name “GLASSMAN TIMOTHY E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED TECH MATERIALS

8 patents

US6110529AAug 29, 2000

Method of forming metal films on a substrate by chemical vapor deposition

ADVANCED TECH MATERIALS276 citations98

US5820664AOct 13, 1998

Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same

ADVANCED TECH MATERIALS266 citations98

US5679815AOct 21, 1997

Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same

ADVANCED TECH MATERIALS49 citations96

US5677002AOct 14, 1997

Chemical vapor deposition of tantalum- or niobium-containing coatings

ADVANCED TECH MATERIALS49 citations96

US7323581B1Jan 29, 2008

Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition

ADVANCED TECH MATERIALS56 citations95

US5698022ADec 16, 1997

Lanthanide/phosphorus precursor compositions for MOCVD of lanthanide/phosphorus oxide films

ADVANCED TECH MATERIALS127 citations95

US5902639AMay 11, 1999

Method of forming bismuth-containing films by using bismuth amide compounds

ADVANCED TECH MATERIALS33 citations92

US5972743AOct 26, 1999

Precursor compositions for ion implantation of antimony and ion implantation process utilizing same

ADVANCED TECH MATERIALS8 citations74

INTEL CORP

5 patents

US6716707B1Apr 6, 2004

Method for making a semiconductor device having a high-k gate dielectric

INTEL CORP52 citations96

US6713358B1Mar 30, 2004

Method for making a semiconductor device having a high-k gate dielectric

INTEL CORP77 citations95

US6787440B2Sep 7, 2004

Method for making a semiconductor device having an ultra-thin high-k gate dielectric

INTEL CORP41 citations92

US11342499B2May 24, 2022

RRAM devices with reduced forming voltage

INTEL CORP4 citations68

US11489112B2Nov 1, 2022

Resistive random access memory device and methods of fabrication

INTEL CORP0 citations43

LINDERT NICK

1 patent

US9691839B2Jun 27, 2017

Metal-insulator-metal (MIM) capacitor with insulator stack having a plurality of metal oxide layers

LINDERT NICK12 citations82

STEIGERWALD JOSEPH M

1 patent

US8441097B2May 14, 2013

Methods to form memory devices having a capacitor with a recessed electrode

STEIGERWALD JOSEPH M5 citations71

GARDINER ROBIN A

1 patent

US8299286B2Oct 30, 2012

Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition

GARDINER ROBIN A2 citations52