Inventor
LEE JO-WON
KR25 patents
⚠️ This page may combine multiple inventors who share the name “LEE JO-WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
21 patentsUS6566704B2May 20, 2003
Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD255 citations99
US6855603B2Feb 15, 2005
Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD68 citations98
US6833567B2Dec 21, 2004
Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD42 citations96
US6597036B1Jul 22, 2003
Multi-value single electron memory using double-quantum dot and driving method thereof
SAMSUNG ELECTRONICS CO LTD57 citations96
US6946703B2Sep 20, 2005
SONOS memory device having side gate stacks and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD83 citations95
US7345898B2Mar 18, 2008
Complementary nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD22 citations92
US7187030B2Mar 6, 2007
SONOS memory device
SAMSUNG ELECTRONICS CO LTD21 citations92
US6930343B2Aug 16, 2005
Nonvolatile memory device utilizing a vertical nanotube
SAMSUNG ELECTRONICS CO LTD28 citations92
US6815294B2Nov 9, 2004
Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD32 citations92
US6180202B1Jan 30, 2001
Large capacity disk and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD19 citations92
US6268273B1Jul 31, 2001
Fabrication method of single electron tunneling device
SAMSUNG ELECTRONICS CO LTD24 citations89
US6313503B1Nov 6, 2001
MNOS-type memory using single electron transistor and driving method thereof
SAMSUNG ELECTRONICS CO LTD28 citations87
US7202521B2Apr 10, 2007
Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same
SAMSUNG ELECTRONICS CO LTD19 citations84
US7020064B2Mar 28, 2006
Rewritable data storage using carbonaceous material and writing/reading method thereof
SAMSUNG ELECTRONICS CO LTD17 citations83
US5815910AOct 6, 1998
Method for manufacturing a magnetic head
SAMSUNG ELECTRONICS CO LTD15 citations74
US6479365B2Nov 12, 2002
Single electron transistor using porous silicon and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD13 citations73
US6414333B1Jul 2, 2002
Single electron transistor using porous silicon
SAMSUNG ELECTRONICS CO LTD9 citations73
US7374991B2May 20, 2008
SONOS memory device having side gate stacks and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD6 citations71
US7432554B2Oct 7, 2008
CMOS thin film transistor comprising common gate, logic device comprising the CMOS thin film transistor, and method of manufacturing the CMOS thin film transistor
SAMSUNG ELECTRONICS CO LTD5 citations63
US7719871B2May 18, 2010
Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US7759196B2Jul 20, 2010
Multi-bit non-volatile memory device, method of operating the same, and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations42