Inventor

GILES MARTIN D

US28 patents

⚠️ This page may combine multiple inventors who share the name “GILES MARTIN D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GILES MARTIN D

INTEL CORP

Gate-induced strain for MOS performance improvement

Silicon and silicon germanium nanowire structures

Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress

Gate-induced strain for MOS performance improvement

Fins for metal oxide semiconductor device structures

Fins for metal oxide semiconductor device structures

Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer

Transistor performance enhancement using engineered strains

Method and structure to decrease area capacitance within a buried insulator device

Method to form a structure to decrease area capacitance within a buried insulator device

Semiconductor device having metallic source and drain regions

Silicon and silicon germanium nanowire structures

Nanowire structures having non-discrete source and drain regions

Non-planar device having uniaxially strained semiconductor body and method of making same

Multiple oxide thickness for a semiconductor device

CEA STEPHEN M

Non-planar device having uniaxially strained semiconductor body and method of making same

Methods and apparatus to reduce layout based strain variations in non-planar transistor structures

Nanowire structures having non-discrete source and drain regions

Nanowire structures having non-discrete source and drain regions

Methods and apparatus to reduce layout based strain variations in non-planar transistor structures

KUHN KELIN J

Silicon and silicon germanium nanowire structures

Silicon and silicon germanium nanowire structures

GILES MARTIN D

Methods for forming fins for metal oxide semiconductor device structures

Semiconductor device having metallic source and drain regions

GOOGLE LLC

Nanowire structures having non-discrete source and drain regions

Nanowire structures having non-discrete source and drain regions

SONY GROUP CORP

Silicon and silicon germanium nanowire structures

SONY CORP

Silicon and silicon germanium nanowire structures