Inventor

WALL RALPH N

US19 patents

⚠️ This page may combine multiple inventors who share the name “WALL RALPH N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WALL RALPH N

SEMICONDUCTOR COMPONENTS IND LLC

Trench-gate insulated-gate bipolar transistors

Trench-gate insulated-gate bipolar transistors (IGBTs)

Semiconductor devices and methods of manufacturing semiconductor devices

Semiconductor devices and methods of manufacturing semiconductor devices

Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs)

Electronic device including a semiconductor layer within a trench and a semiconductor layer and a process of forming the same

Semiconductor device with a buried junction layer having an interspersed pattern of doped and counter-doped materials

Electronic device including an insulated gate bipolar transistor having a field-stop region and a process of forming the same

Accumulation enhanced insulated gate bipolar transistor (AEGT) and methods of use thereof

MAXIM INTEGRATED PRODUCTS

Method to control BAW resonator top electrode edge during patterning

Metal trim mirror for optimized thin film resistor laser trimming

BAW resonator bi-layer top electrode with zero etch undercut

BAW resonator bi-layer top electrode with zero etch undercut

Orientation-dependent etching of deposited AlN for structural use and sacrificial layers in MEMS

Methods of contacting the top layer of a BAW resonator

GODSHALK EDWARD MARTIN

Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters

BOUCHE GUILLAUME

Method to control BAW resonator top electrode edge during patterning

TRIQUINT SEMICONDUCTOR INC

Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters

HAMOU HAIM BEN

Process of making a BAW resonator bi-layer top electrode