Inventor

CHEN TIANNIU

US51 patents

⚠️ This page may combine multiple inventors who share the name “CHEN TIANNIU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHEN TIANNIU

ADVANCED TECH MATERIALS

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Tantalum amide complexes for depositing tantalum-containing films, and method of making same

Tantalum amide complexes for depositing tantalum-containing films, and method of making same

Tantalum amide complexes for depositing tantalum-containing films, and method of making same

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Apparatus and method for stripping solder metals during the recycling of waste electrical and electronic equipment

Low temperature deposition of phase change memory materials

Tellurium compounds useful for deposition of tellurium containing materials

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films

Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films

Copper precursors for CVD/ALD/digital CVD of copper metal films

Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films

Antimony compounds useful for deposition of antimony-containing materials

Tantalum amide complexes for depositing tantalum-containing films, and method of making same

Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films

Tantalum amide complexes for depositing tantalum-containing films, and method of making same

ENTEGRIS INC

Apparatus and method for stripping solder metals during the recycling of waste electrical and electronic equipment

Tellurium compounds useful for deposition of tellurium containing materials

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Silicon implantation in substrates and provision of silicon precursor compositions therefor

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

AIR PROD & CHEM

Titanium nitride hard mask and etch residue removal

Selectively removing titanium nitride hard mask and etch residue removal

TiN hard mask and etch residual removal

Composition for titanium nitride hard mask and etch residue removal

Composition for treating surface of substrate, method and device

Photoresist cleaning composition used in photolithography and a method for treating substrate therewith

VERSUM MAT US LLC

Composition comprising three alkanolamines and a hydroxylamine for removing etch residues

Stripping compositions having high WN/W etching selectivity

Etching solution for tungsten and GST films

Etching compositions and methods for using same

TiN hard mask and etch residue removal

CHEN TIANNIU

Apparatus and method for stripping solder metals during the recycling of waste electrical and electronic equipment

Composition and process for selectively etching metal nitrides

Lithographic tool in situ clean formulations

Antimony compounds useful for deposition of antimony-containing materials

XU CHONGYING

Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films

Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films

Precursor compositions for ALD/CVD of group II ruthenate thin films

ROEDER JEFFREY F

Low temperature deposition of phase change memory materials

Low temperature deposition of phase change memory materials

WANG ZIYUN

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

HUNKS WILLIAM

Antimony and germanium complexes useful for CVD/ALD of metal thin films

CHEN PHILIP S H

Amorphous Ge/Te deposition process

CAMERON THOMAS M

Precursors for CVD/ALD of metal-containing films