Inventor

XU CHONGYING

US109 patents

⚠️ This page may combine multiple inventors who share the name “XU CHONGYING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

XU CHONGYING

ADVANCED TECH MATERIALS

Delivery systems for efficient vaporization of precursor source material

Delivery systems for efficient vaporization of precursor source material

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same

Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride

Composition and method for low temperature deposition of silicon-containing films

Chemical vapor deposition of high conductivity, adherent thin films of ruthenium

Composition and method for low temperature deposition of silicon-containing films

Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same

Tantalum amide complexes for depositing tantalum-containing films, and method of making same

Tantalum amide complexes for depositing tantalum-containing films, and method of making same

Supercritical fluid-assisted deposition of materials on semiconductor substrates

Supercritical fluid-assisted deposition of materials on semiconductor substrates

Tantalum amide complexes for depositing tantalum-containing films, and method of making same

Vapor delivery system for solid precursors and method of using same

Silicon reagents and low temperature CVD method of forming silicon-containing gate dielectric materials using same

Treatment of supercritical fluid utilized in semiconductor manufacturing applications

Pyrazolate copper complexes, and MOCVD of copper using same

Composition and process for production of copper circuitry in microelectronic device structures

Pyrazolate copper complexes, and MOCVD of copper using same

Method of fabricating iridium-based materials and structures on substrates, and iridium source reagents therefor

Copper source reagent compositions, and method of making and using same for microelectronic device structures

Antimony and germanium complexes useful for CVD/ALD of metal thin films

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Supercritical fluid-based cleaning compositions and methods

Composition and method for low temperature deposition of silicon-containing films

Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal

Copper (I) compounds useful as deposition precursors of copper thin films

Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations

Compositions and methods for high-efficiency cleaning/polishing of semiconductor wafers

Supercritical carbon dioxide/chemical formulation for removal of photoresists

Removal of particle contamination on patterned silicon/silicon dioxide using supercritical carbon dioxide/chemical formulations

Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same

Copper precursor composition and process for manufacture of microelectronic device structures

Pyrazolate copper complexes, and MOCVD of copper using same

Method and apparatus for forming low dielectric constant polymeric films

Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films

Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products

HUNKS WILLIAM

Precursors for silicon dioxide gap fill

Antimony and germanium complexes useful for CVD/ALD of metal thin films

WANG ZIYUN

Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Composition and method for low temperature deposition of silicon-containing films

CLEARY JOHN M

Solid precursor-based delivery of fluid utilizing controlled solids morphology

ADVANCED TEHNOLOGY MATERIALS I

Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same

ADVANCED TECHNOLOGY MATERIAL I

Method and apparatus for forming low dielectric constant polymeric films

ENTEGRIS INC

Tellurium compounds useful for deposition of tellurium containing materials