Inventor
BAN SANG-HYUN
KR13 patents
⚠️ This page may combine multiple inventors who share the name “BAN SANG-HYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
10 patentsUS10115461B1Oct 30, 2018
Electronic device using resistive memory element and a recovery operation to compensate for threshold drift
SK HYNIX INC6 citations72
US10825519B1Nov 3, 2020
Electronic device and method of operating memory cell in the electronic device
SK HYNIX INC3 citations71
US10868249B2Dec 15, 2020
Chalcogenide material and electronic device including the same
SK HYNIX INC2 citations70
US11342043B2May 24, 2022
Electronic device for changing short-type defective memory cell to open-type defective memory cell by applying stress pulse
SK HYNIX INC0 citations62
US11164654B2Nov 2, 2021
Method for driving an electronic device including a semiconductor memory in a test mode
SK HYNIX INC0 citations62
US10783981B1Sep 22, 2020
Semiconductor memory capable of reducing an initial turn-on voltage of a memory cell using a stress pulse in a test mode, and method for driving the same
SK HYNIX INC1 citations62
US11443805B2Sep 13, 2022
Electronic device and method of operating memory cell in the electronic device
SK HYNIX INC0 citations61
US11264095B2Mar 1, 2022
Electronic device and method of operating memory cell in the electronic device
SK HYNIX INC0 citations61
US11707005B2Jul 18, 2023
Chalcogenide material, variable resistance memory device and electronic device
SK HYNIX INC0 citations58
US10685733B2Jun 16, 2020
Electronic device for changing short-type defective memory cell to open-type defective memory cell by applying stress pulse
SK HYNIX INC0 citations51