Inventor
MOON BUM-KI
US43 patents
⚠️ This page may combine multiple inventors who share the name “MOON BUM-KI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
19 patentsUS6787831B2Sep 7, 2004
Barrier stack with improved barrier properties
INFINEON TECHNOLOGIES AG15 citations91
US7229918B2Jun 12, 2007
Nitrogen rich barrier layers and methods of fabrication thereof
INFINEON TECHNOLOGIES AG10 citations84
US6924519B2Aug 2, 2005
Semiconductor device with perovskite capacitor
INFINEON TECHNOLOGIES AG8 citations74
US6924521B2Aug 2, 2005
Semiconductor device comprising a capacitor using a ferroelectric material
INFINEON TECHNOLOGIES AG5 citations74
US7071506B2Jul 4, 2006
Device for inhibiting hydrogen damage in ferroelectric capacitor devices
INFINEON TECHNOLOGIES AG9 citations73
US7898082B2Mar 1, 2011
Nitrogen rich barrier layers and methods of fabrication thereof
INFINEON TECHNOLOGIES AG5 citations63
US7105400B2Sep 12, 2006
Manufacturing method of semiconductor device
INFINEON TECHNOLOGIES AG4 citations63
US7042037B1May 9, 2006
Semiconductor device
INFINEON TECHNOLOGIES AG2 citations62
US6839220B1Jan 4, 2005
Multi-layer barrier allowing recovery anneal for ferroelectric capacitors
INFINEON TECHNOLOGIES AG2 citations62
US6614642B1Sep 2, 2003
Capacitor over plug structure
INFINEON TECHNOLOGIES AG3 citations61
US7399702B2Jul 15, 2008
Methods of forming silicide
INFINEON TECHNOLOGIES AG1 citations52
US7169658B2Jan 30, 2007
Method for formation of an ultra-thin film and semiconductor device containing such a film
INFINEON TECHNOLOGIES AG0 citations52
US10008560B2Jun 26, 2018
Capacitors in integrated circuits and methods of fabrication thereof
INFINEON TECHNOLOGIES AG0 citations51
US9425140B2Aug 23, 2016
Capacitors in integrated circuits and methods of fabrication thereof
INFINEON TECHNOLOGIES AG0 citations51
US7713866B2May 11, 2010
Semiconductor devices and methods of manufacture thereof
INFINEON TECHNOLOGIES AG0 citations51
US7198959B2Apr 3, 2007
Process for fabrication of a ferrocapacitor
INFINEON TECHNOLOGIES AG1 citations51
US6891713B2May 10, 2005
Element storage layer in integrated circuits
INFINEON TECHNOLOGIES AG0 citations51
US6621683B1Sep 16, 2003
Memory cells with improved reliability
INFINEON TECHNOLOGIES AG1 citations51
US7119021B2Oct 10, 2006
Ferroelectric capacitor devices and a method for compensating for damage to a capacitor caused by etching
INFINEON TECHNOLOGIES AG0 citations42
INTEL CORP
8 patentsUS9640332B2May 2, 2017
Hybrid electrochemical capacitor
INTEL CORP4 citations73
US9355790B2May 31, 2016
Energy storage devices having enhanced specific energy and associated methods
INTEL CORP2 citations61
US11276853B2Mar 15, 2022
Particle-based silicon electrodes for energy storage devices
INTEL CORP0 citations60
US9685278B2Jun 20, 2017
Energy storage devices having enhanced specific energy and associated methods
INTEL CORP0 citations51
US9093226B2Jul 28, 2015
Energy storage device, method of manufacturing same, and mobile electronic device containing same
INTEL CORP1 citations51
US10217996B2Feb 26, 2019
Particle-based silicon electrodes for energy storage devices
INTEL CORP0 citations49
US9484576B2Nov 1, 2016
Particle-based silicon electrodes for energy storage devices
INTEL CORP0 citations49
US9928966B2Mar 27, 2018
Nanostructured electrolytic energy storage devices
INTEL CORP0 citations41
TOSHIBA KK
4 patentsUS7473565B2Jan 6, 2009
Semiconductor device and method of manufacturing the same
TOSHIBA KK9 citations84
US7031138B2Apr 18, 2006
Ferroelectric capacitor and process for its manufacture
TOSHIBA KK7 citations73
US7504680B2Mar 17, 2009
Semiconductor device and mask pattern
TOSHIBA KK2 citations59
US7009230B2Mar 7, 2006
Barrier stack with improved barrier properties
TOSHIBA KK0 citations52
SAMSUNG ELECTRONICS CO LTD
2 patentsUS7879720B2Feb 1, 2011
Methods of forming electrical interconnects using electroless plating techniques that inhibit void formation
SAMSUNG ELECTRONICS CO LTD7 citations83
US8373273B2Feb 12, 2013
Methods of forming integrated circuit devices having damascene interconnects therein with metal diffusion barrier layers and devices formed thereby
SAMSUNG ELECTRONICS CO LTD1 citations50