Inventor

WAKABAYASHI HITOSHI

JP23 patents

⚠️ This page may combine multiple inventors who share the name “WAKABAYASHI HITOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WAKABAYASHI HITOSHI

NEC CORP

Semiconductor device with fin-type field effect transistor and manufacturing method thereof.

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing same

Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same

Soi mosfet

Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal

Semiconductor device and manufacturing method thereof

Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing semiconductor device

SONY CORP

Stereophonic sound reproduction system

Semiconductor device with field effect transistor and manufacturing method thereof

Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions

Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions

Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions

Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions

Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions

Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regions

SUMITOMO CHEMICAL CO

Method for evaluating electrical defect density of semiconductor layer, and semiconductor element

Charge trap evaluation method and semiconductor element

TOSHIBA KK

Semiconductor device

MAYUZUMI SATORU

Semiconductor device having a stress-inducing layer between channel region and source and drain regions

HOKKO CHEM IND CO

1-(n,n-disubstituted carbamoyl) 4-(substituted sulfonyl)triazolin-5-one derivative, 4-(n,n-disubstituted carbamoyl) 1-(substituted sulfonyl)triazolin-5-one derivative, and herbicide containing said derivative as active ingredient