Inventor
YANG HUNG-KUN
TW3 patents
Patents
3 patentsUS10784336B2Sep 22, 2020
Gallium nitride high electron mobility transistor and gate structure thereof
EXCELLIANCE MOS CORP3 citations67
US12414351B2Sep 9, 2025
Manufacturing method of split gate trench device
EXCELLIANCE MOS CORP0 citations57
US10720506B1Jul 21, 2020
Method of manufacturing gate structure for gallium nitride high electron mobility transistor
EXCELLIANCE MOS CORP0 citations46