Inventor

DREWES JOEL A

US51 patents

⚠️ This page may combine multiple inventors who share the name “DREWES JOEL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DREWES JOEL A

MICRON TECHNOLOGY INC

MRAM sense layer area control

Method for production of MRAM elements

Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication

Method of fabricating a multilayer dielectric tunnel barrier structure

Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication

Magnetoresistive memory device

MRAM layer having domain wall traps

Method of improving surface planarity prior to MRAM bit material deposition

MRAM memory elements and method for manufacture of MRAM memory elements

Methods of forming magnetoresisitive devices

Antiferromagnetically stabilized pseudo spin valve for memory applications

System and method for reducing shorting in memory cells

Method for production of MRAM elements

Assemblies comprising magnetic elements and magnetic barrier or shielding at least partially around the magnetic elements

Methods of forming semiconductor constructions

Methods of forming semiconductor constructions

Antiferromagnetically stabilized pseudo spin valve for memory applications

Reducing the effects of néel coupling in MRAM structures

Method and apparatus providing MRAM devices with fine tuned offset

Oxide buffer layer for improved magnetic tunnel junctions

MRAM sense layer area control

Methods of operating MRAM devices

Method for reducing diffusion through ferromagnetic materials

Device having reduced diffusion through ferromagnetic materials

Assemblies comprising magnetic elements and magnetic barrier or shielding

System and method for reducing shorting in memory cells

Methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses

Substrate susceptors for receiving semiconductor substrates to be deposited upon

Method for production of MRAM elements

Device having improved surface planarity prior to MRAM bit material deposition

System and method for reducing shorting in memory cells

Forming oxide buffer layer for improved magnetic tunnel junctions

Method for fabricating sensor devices having improved switching properties

MRAM layer having domain wall traps

Magnetoresistive memory or sensor devices having improved switching properties and method of fabrication

Method for manufacture of MRAM memory elements

Semiconductor processing methods

Memory constructions comprising magnetic materials

Methods of titanium deposition

Methods of titanium deposition

Methods of forming titanium-containing materials

MRAM layer having domain wall traps

Layered magnetic structures having improved surface planarity for bit material deposition

Multilayer dielectric tunnel barrier used in magnetic tunnel junction devices, and its method of fabrication

Methods of forming semiconductor constructions

Antiferromagnetically stabilized pseudo spin valve for memory applications

Antiferromagnetically stabilized pseudo spin valve for memory applications

MRAM devices with fine tuned offset

THERMO BIOSTAR INC

Device for mass transport assisted optical assays

INVERNESS MEDICAL BIOSTAR INC

Flow-through optical assay devices providing laminar flow of fluid samples, and methods of construction thereof