P

Inventor

YANG CHENG-JER

CN16 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHENG-JER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHANGXIN MEMORY TECH INC

13 patents
US12293979B2May 6, 2025

Memory structure including elastic material based buffer column structure near contact structure to improve stability of connection

CHANGXIN MEMORY TECH INC0 citations61
US12033691B2Jul 9, 2024

Readout circuit layout structure, readout circuit, and memory layout structure

CHANGXIN MEMORY TECH INC1 citations61
US12519014B2Jan 6, 2026

Semiconductor structure including an electrode cover layer over a capacitor of a dynamic random access memory (DRAM) formed in a substrate, and a contact structure electrically connected to the electrode cover layer, and method of making the same

CHANGXIN MEMORY TECH INC0 citations50
US12341132B2Jun 24, 2025

Semiconductor structure

CHANGXIN MEMORY TECH INC0 citations50
US11929132B2Mar 12, 2024

Testing method, testing system, and testing apparatus for semiconductor chip

CHANGXIN MEMORY TECH INC0 citations50
US11892502B2Feb 6, 2024

Through-silicon via (TSV) fault-tolerant circuit, method for TSV fault-tolerance and integrated circuit (IC)

CHANGXIN MEMORY TECH INC0 citations50
US11886733B2Jan 30, 2024

Circuit for testing a memory and test method thereof

CHANGXIN MEMORY TECH INC0 citations50
US11869576B2Jan 9, 2024

Word line driving circuit and dynamic random access memory

CHANGXIN MEMORY TECH INC0 citations50
US11862269B2Jan 2, 2024

Testing method for packaged chip, testing system for packaged chip, computer device and storage medium

CHANGXIN MEMORY TECH INC0 citations50
US11830553B2Nov 28, 2023

Word line drive circuit and dynamic random access memory

CHANGXIN MEMORY TECH INC0 citations50
US11715543B2Aug 1, 2023

Memory test circuit apparatus and test method

CHANGXIN MEMORY TECH INC0 citations50
US11340294B2May 24, 2022

Boundary test circuit, memory and boundary test method

CHANGXIN MEMORY TECH INC0 citations50
US11614481B2Mar 28, 2023

Through-silicon via detecting circuit, detecting methods and integrated circuit thereof

CHANGXIN MEMORY TECH INC0 citations44

(unassigned)

1 patent

UNITED MICROELECTRONICS CORP

1 patent

PROMOS TECHNOLOGIES INC

1 patent