P

Inventor

WANG PO-JEN

TW26 patents
⚠️ This page may combine multiple inventors who share the name “WANG PO-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

21 patents
US11335638B2May 17, 2022

Reducing RC delay in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11817345B2Nov 14, 2023

Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11804439B2Oct 31, 2023

Reducing RC delay in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11367778B2Jun 21, 2022

MOSFET device structure with air-gaps in spacer and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10804389B2Oct 13, 2020

LDMOS transistor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12446289B2Oct 14, 2025

MOSFET device structure with air-gaps in spacer and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230574B2Feb 18, 2025

Reducing RC delay in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855170B2Dec 26, 2023

MOSFET device structure with air-gaps in spacer and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11682549B2Jun 20, 2023

Semiconductor wafer with modified surface and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11488872B2Nov 1, 2022

Method for forming semiconductor device structure with isolation feature

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11398403B2Jul 26, 2022

Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11171199B2Nov 9, 2021

Metal-insulator-metal capacitors with high breakdown voltage

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10916416B2Feb 9, 2021

Semiconductor wafer with modified surface and fabrication method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10699963B2Jun 30, 2020

Structure and formation method of semiconductor device structure with isolation feature

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11201082B2Dec 14, 2021

Deep trench isolation structure in semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10483153B2Nov 19, 2019

Deep trench isolation structure in semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US12414322B2Sep 9, 2025

LDMOS transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11855137B2Dec 26, 2023

SOI device structure for robust isolation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11855202B2Dec 26, 2023

LDMOS transistor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11257902B2Feb 22, 2022

SOI device structure for robust isolation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US9449976B2Sep 20, 2016

Semiconductor device structure and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations36

SINTAI OPTICAL SHENZHEN CO LTD

2 patents

WANG PO-JEN

1 patent

STONERIDGE ELECTRONICS AB

1 patent

TAIWAN SEMICONDUCTOR MFG

1 patent