Inventor
WANG PO-JEN
TW26 patents
⚠️ This page may combine multiple inventors who share the name “WANG PO-JEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS11335638B2May 17, 2022
Reducing RC delay in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11817345B2Nov 14, 2023
Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11804439B2Oct 31, 2023
Reducing RC delay in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11367778B2Jun 21, 2022
MOSFET device structure with air-gaps in spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10804389B2Oct 13, 2020
LDMOS transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations70
US12446289B2Oct 14, 2025
MOSFET device structure with air-gaps in spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230574B2Feb 18, 2025
Reducing RC delay in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855170B2Dec 26, 2023
MOSFET device structure with air-gaps in spacer and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11682549B2Jun 20, 2023
Semiconductor wafer with modified surface and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11488872B2Nov 1, 2022
Method for forming semiconductor device structure with isolation feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11398403B2Jul 26, 2022
Multiple thickness semiconductor-on-insulator field effect transistors and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11171199B2Nov 9, 2021
Metal-insulator-metal capacitors with high breakdown voltage
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10916416B2Feb 9, 2021
Semiconductor wafer with modified surface and fabrication method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10699963B2Jun 30, 2020
Structure and formation method of semiconductor device structure with isolation feature
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11201082B2Dec 14, 2021
Deep trench isolation structure in semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10483153B2Nov 19, 2019
Deep trench isolation structure in semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US12414322B2Sep 9, 2025
LDMOS transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11855137B2Dec 26, 2023
SOI device structure for robust isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11855202B2Dec 26, 2023
LDMOS transistor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11257902B2Feb 22, 2022
SOI device structure for robust isolation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US9449976B2Sep 20, 2016
Semiconductor device structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations36