Inventor
SUMITOMO TAKAMICHI
JP42 patents
⚠️ This page may combine multiple inventors who share the name “SUMITOMO TAKAMICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO ELECTRIC INDUSTRIES
12 patentsUS7933303B2Apr 26, 2011
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
SUMITOMO ELECTRIC INDUSTRIES30 citations92
US7851821B2Dec 14, 2010
Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device
SUMITOMO ELECTRIC INDUSTRIES9 citations84
US8053806B2Nov 8, 2011
Group III nitride semiconductor device and epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES4 citations74
US7858963B2Dec 28, 2010
Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
SUMITOMO ELECTRIC INDUSTRIES6 citations74
US8357946B2Jan 22, 2013
Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting device
SUMITOMO ELECTRIC INDUSTRIES2 citations63
US7851243B1Dec 14, 2010
Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
SUMITOMO ELECTRIC INDUSTRIES2 citations63
US12470046B2Nov 11, 2025
Vertical cavity surface-emitting laser
SUMITOMO ELECTRIC INDUSTRIES0 citations61
US10938181B2Mar 2, 2021
Vertical cavity surface emitting laser and method for manufacturing vertical cavity surface emitting laser
SUMITOMO ELECTRIC INDUSTRIES0 citations60
US7955881B2Jun 7, 2011
Method of fabricating quantum well structure
SUMITOMO ELECTRIC INDUSTRIES1 citations52
US8357558B2Jan 22, 2013
Method of making semiconductor light-emitting device
SUMITOMO ELECTRIC INDUSTRIES0 citations42
US8923354B2Dec 30, 2014
Nitride semiconductor laser, epitaxial substrate
SUMITOMO ELECTRIC INDUSTRIES0 citations41
US10594110B2Mar 17, 2020
Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laser
SUMITOMO ELECTRIC INDUSTRIES0 citations40
KYONO TAKASHI
8 patentsUS8718110B2May 6, 2014
Nitride semiconductor laser and epitaxial substrate
KYONO TAKASHI6 citations72
US8803274B2Aug 12, 2014
Nitride-based semiconductor light-emitting element
KYONO TAKASHI3 citations62
US8513684B2Aug 20, 2013
Nitride semiconductor light emitting device
KYONO TAKASHI3 citations62
US8207556B2Jun 26, 2012
Group III nitride semiconductor device and epitaxial substrate
KYONO TAKASHI2 citations62
US8953656B2Feb 10, 2015
III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser device
KYONO TAKASHI1 citations52
US8304269B2Nov 6, 2012
Method of fabricating group III nitride semiconductor device
KYONO TAKASHI0 citations52
US8748868B2Jun 10, 2014
Nitride semiconductor light emitting device and epitaxial substrate
KYONO TAKASHI0 citations41
US8405066B2Mar 26, 2013
Nitride-based semiconductor light-emitting device
KYONO TAKASHI0 citations41
YOSHIZUMI YUSUKE
7 patentsUS8546163B2Oct 1, 2013
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE6 citations84
US8306082B2Nov 6, 2012
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE12 citations84
US8227277B2Jul 24, 2012
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE15 citations84
US8741674B2Jun 3, 2014
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE6 citations73
US8507305B2Aug 13, 2013
Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrate
YOSHIZUMI YUSUKE4 citations62
US8693515B2Apr 8, 2014
Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
YOSHIZUMI YUSUKE0 citations52
US8541253B2Sep 24, 2013
III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device
YOSHIZUMI YUSUKE0 citations42
ENYA YOHEI
5 patentsUS8483251B2Jul 9, 2013
Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode
ENYA YOHEI2 citations62
US8476615B2Jul 2, 2013
GaN-based semiconductor light emitting device and the method for making the same
ENYA YOHEI3 citations62
US8207544B2Jun 26, 2012
Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device
ENYA YOHEI2 citations62
US8487327B2Jul 16, 2013
Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device
ENYA YOHEI0 citations51
US8809868B2Aug 19, 2014
Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrate
ENYA YOHEI1 citations50
UENO MASAKI
3 patentsUS8927962B2Jan 6, 2015
Group III nitride semiconductor optical device
UENO MASAKI4 citations73
US8067257B2Nov 29, 2011
Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device
UENO MASAKI1 citations52
US8183596B2May 22, 2012
High electron mobility transistor, epitaxial wafer, and method of fabricating high electron mobility transistor
UENO MASAKI0 citations42
SUMITOMO TAKAMICHI
3 patentsUS9231370B2Jan 5, 2016
Group III nitride semiconductor light emitting device
SUMITOMO TAKAMICHI1 citations49
US8284811B2Oct 9, 2012
Gallium nitride-based semiconductor laser diode
SUMITOMO TAKAMICHI0 citations39
US8174035B2May 8, 2012
Nitride-based semiconductor light emitting device
SUMITOMO TAKAMICHI0 citations39