Inventor

HOWARD DAVID J

US117 patents

⚠️ This page may combine multiple inventors who share the name “HOWARD DAVID J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HOWARD DAVID J

NEWPORT FAB LLC

Substrates and heat spreaders for heat management and RF isolation in integrated semiconductor devices having phase-change material (PCM) radio frequency (RF) switches

High reliability RF switch based on phase-change material

Method for fabricating a top conductive layer in a semiconductor die and related structure

High-k dielectric stack in a MIM capacitor and method for its fabrication

Phase-change material (PCM) radio frequency (RF) switches with stressor layers and contact adhesion layers

Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method

Fabricating a top conductive layer in a semiconductor die

Method for fabricating a frontside through-wafer via in a processed wafer and related structure

Deep trench isolation and method for forming same

Concurrent fabrication of and structure for capacitive terminals and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch

Device including PCM RF switch integrated with group III-V semiconductors

Phase-change material (PCM) RF switch with top metal contact to heating element

Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method

Heating element designs for phase-change material (PCM) radio frequency (RF) switches

Wafer-to-wafer and die-to-wafer bonding of phase-change material (PCM) switches with integrated circuits and bonded two-die devices

PCM RF switch fabrication with subtractively formed heater

Manufacturing RF switch based on phase-change material

Integration of thermally conductive but electrically isolating layers with semiconductor devices

Copper interconnect for improving radio frequency (RF) silicon-on-insulator (SOI) switch field effect transistor (FET) stacks

Reduced substrate effects in monolithically integrated RF circuits

Method for increasing inductance of on-chip inductors and related structure

Power handling improvements for phase-change material (PCM) radio frequency (RF) switch circuits

Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device and method of manufacturing

RF SOI switches including low dielectric constant features between metal line structures

Semiconductor structure having through-substrate via (TSV) in porous semiconductor region

Semiconductor chips and systems having phase-change material (PCM) switches integrated with micro-electrical-mechanical systems (MEMS) and/or resonators

Method for forming a semiconductor structure having a porous semiconductor layer in RF devices

Discrete and monolithic phase-change material (PCM) radio frequency (RF) switches with sheet of thermally conductive and electrically insulating material

Semiconductor structure having porous semiconductor segment for RF devices and bulk semiconductor region for non-RF devices

Semiconductor structure having porous semiconductor layer for RF devices

Capacitive and ohmic terminals in a phase-change material (PCM) radio frequency (RF) switch

Radio frequency (RF) switches having phase-change material (PCM) and heat management for increased manufacturability and performance

PCM RF switch with PCM contacts having slot lower portions

Phase-change material (PCM) radio frequency (RF) switches with trench metal plugs for RF terminals

High performance SiGe heterojunction bipolar transistors built on thin-film silicon-on-insulator substrates for radio frequency applications

Circuits for reducing RF signal interference and for reducing DC power loss in phase-change material (PCM) RF switches

Phase-change material (PCM) radio frequency (RF) switch using a chemically protective and thermally conductive layer

Stacked phase-change material (PCM) radio frequency (RF) switches with improved RF power handling

Phase-change material RF switch

TOWER SEMICONDUCTOR LTD

Hybrid MOS-PCM CMOS SOI switch

Fingerprint sensor with direct recording to non-volatile memory

BAYER AG

Method and apparatus for wash, resuspension, recollection and localization of magnetizable particles in assays using magnetic separation technology

Method and apparatus for monitoring an aspirating and dispensing system

NUVECTRA CORP

Digital control for pulse generators

CONEXANT SYSTEMS INC

Method for fabrication of high inductance inductors and related structure

GREATBATCH LTD

Communication for implantable medical devices

KAR-ROY ARJUN

Method for fabricating a backside through-wafer via in a processed wafer and related structure

DEBAR MICHAEL J

Structure for encapsulating microelectronic devices

NEWPORT FAB

Robust MEMS structure with via cap and related method

EASTMAN KODAK CO

Signal processing for a thermal printer