Inventor
CHAN KEVIN KOK
US18 patents
⚠️ This page may combine multiple inventors who share the name “CHAN KEVIN KOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
17 patentsUS6096590AAug 1, 2000
Scalable MOS field effect transistor
IBM184 citations98
US6057212AMay 2, 2000
Method for making bonded metal back-plane substrates
IBM388 citations98
US6555880B2Apr 29, 2003
Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby
IBM54 citations96
US6236060B1May 22, 2001
Light emitting structures in back-end of line silicon technology
IBM65 citations96
US6503833B1Jan 7, 2003
Self-aligned silicide (salicide) process for strained silicon MOSFET ON SiGe and structure formed thereby
IBM83 citations95
US6987050B2Jan 17, 2006
Self-aligned silicide (salicide) process for low resistivity contacts to thin film silicon-on-insulator and bulk MOSFETS and for shallow junctions
IBM21 citations92
US6891231B2May 10, 2005
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
IBM19 citations92
US6716708B2Apr 6, 2004
Self-aligned silicide process utilizing ion implants for reduced silicon consumption and control of the silicide formation temperature and structure formed thereby
IBM20 citations92
US7943412B2May 17, 2011
Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters
IBM24 citations91
US6724449B1Apr 20, 2004
Vertical aligned liquid crystal display and method using dry deposited alignment layer films
IBM31 citations91
US7169674B2Jan 30, 2007
Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier
IBM9 citations73
US6870232B1Mar 22, 2005
Scalable MOS field effect transistor
IBM9 citations73
US6281551B1Aug 28, 2001
Back-plane for semiconductor device
IBM6 citations72
US7387924B2Jun 17, 2008
Polycrystalline SiGe junctions for advanced devices
IBM2 citations62
US7183175B2Feb 27, 2007
Shallow trench isolation structure for strained Si on SiGe
IBM5 citations61
US7741165B2Jun 22, 2010
Polycrystalline SiGe Junctions for advanced devices
IBM0 citations51
US7135391B2Nov 14, 2006
Polycrystalline SiGe junctions for advanced devices
IBM0 citations47