Inventor
FURIHATA TOMOYOSHI
JP29 patents
⚠️ This page may combine multiple inventors who share the name “FURIHATA TOMOYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU CHEMICAL CO
26 patentsUS5942367AAug 24, 1999
Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
SHINETSU CHEMICAL CO91 citations99
US6582767B1Jun 24, 2003
Metal pattern forming method
SHINETSU CHEMICAL CO56 citations96
US6312869B1Nov 6, 2001
Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
SHINETSU CHEMICAL CO20 citations93
US6114462ASep 5, 2000
Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
SHINETSU CHEMICAL CO28 citations93
US6383944B1May 7, 2002
Micropatterning method
SHINETSU CHEMICAL CO22 citations92
US6911292B2Jun 28, 2005
Positive resist composition and patterning process
SHINETSU CHEMICAL CO12 citations84
US5618892AApr 8, 1997
2,4-diamino-s-triazinyl group-containing polymer and negative radiation-sensitive resist composition containing the same
SHINETSU CHEMICAL CO16 citations82
US6437058B2Aug 20, 2002
Polymers and positive resist compositions
SHINETSU CHEMICAL CO7 citations74
US6335141B1Jan 1, 2002
Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
SHINETSU CHEMICAL CO13 citations74
US6242151B1Jun 5, 2001
Polymers, resist compositions and patterning method
SHINETSU CHEMICAL CO9 citations74
US6221989B1Apr 24, 2001
Polymers and positive resist compositions
SHINETSU CHEMICAL CO8 citations74
US6218069B1Apr 17, 2001
Photosensitive resin composition and making process
SHINETSU CHEMICAL CO11 citations74
US5523370AJun 4, 1996
Poly(para-T-butoxycarbonyloxystyrene) and method of making
SHINETSU CHEMICAL CO7 citations74
US5314931AMay 24, 1994
Resist compositions
SHINETSU CHEMICAL CO11 citations74
US6841334B2Jan 11, 2005
Onium salts and positive resist materials using the same
SHINETSU CHEMICAL CO6 citations73
US8048611B2Nov 1, 2011
Polyorganosiloxane, resin composition, and patterning process
SHINETSU CHEMICAL CO2 citations63
US7175960B2Feb 13, 2007
Positive resist composition and patterning process
SHINETSU CHEMICAL CO4 citations63
US6790581B2Sep 14, 2004
Hybrid compound, resist, and patterning process
SHINETSU CHEMICAL CO2 citations63
US6558867B2May 6, 2003
Lift-off resist compositions
SHINETSU CHEMICAL CO5 citations63
US6773858B2Aug 10, 2004
Positive photoresist composition
SHINETSU CHEMICAL CO5 citations62
US9299875B2Mar 29, 2016
Manufacture of solar cell module
SHINETSU CHEMICAL CO2 citations60
US8999743B2Apr 7, 2015
Manufacture of solar cell module
SHINETSU CHEMICAL CO2 citations56
US9650538B2May 16, 2017
Method for manufacturing micro-structure
SHINETSU CHEMICAL CO0 citations52
US5668226ASep 16, 1997
2,4-diamino-s-triazinyl group-containing polymer and negative radiation-sensitive resist composition containing the same
SHINETSU CHEMICAL CO1 citations52
US9520522B2Dec 13, 2016
Method of manufacturing solar cell module
SHINETSU CHEMICAL CO0 citations39
US9385253B2Jul 5, 2016
Method of manufacturing solar cell module
SHINETSU CHEMICAL CO0 citations39