Inventor
BAIK SEUNG-JAE
KR17 patents
⚠️ This page may combine multiple inventors who share the name “BAIK SEUNG-JAE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
11 patentsUS7368788B2May 6, 2008
SRAM cells having inverters and access transistors therein with vertical fin-shaped active regions
SAMSUNG ELECTRONICS CO LTD33 citations91
US7338862B2Mar 4, 2008
Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure
SAMSUNG ELECTRONICS CO LTD40 citations91
US7488648B2Feb 10, 2009
Methods of fabricating scalable two-transistor memory devices having metal source/drain regions
SAMSUNG ELECTRONICS CO LTD8 citations83
US7482206B2Jan 27, 2009
Semiconductor devices having nano-line channels and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD17 citations82
US7384841B2Jun 10, 2008
DRAM device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations72
US7973355B2Jul 5, 2011
Nonvolatile memory devices with multiple layers having band gap relationships among the layers
SAMSUNG ELECTRONICS CO LTD2 citations63
US7795659B2Sep 14, 2010
DRAM device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations61
US7791130B2Sep 7, 2010
Non-volatile memory device and methods of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations52
US7566615B2Jul 28, 2009
Methods of fabricating scalable two transistor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US7042107B2May 9, 2006
Scalable two transistor memory devices
SAMSUNG ELECTRONICS CO LTD0 citations51
US7274066B2Sep 25, 2007
Semiconductor memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations41
HUO ZONG-LIANG
2 patentsUS8084316B2Dec 27, 2011
Method of fabricating single transistor floating-body DRAM devices having vertical channel transistor structures
HUO ZONG-LIANG18 citations90
US8405137B2Mar 26, 2013
Single transistor floating-body DRAM devices having vertical channel transistor structures
HUO ZONG-LIANG3 citations60